Grain Growth in Cu
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概要
- 論文の詳細を見る
Cu<inf>2</inf>ZnSnS<inf>4</inf>thin films containing grains grown using Sn vapor transport (TVT) were investigated. Structural characterization revealed that the grain sizes were equal to or larger than the film thickness (1--4 μm) and significantly larger than those in the case of growth without TVT (60 nm). Furthermore, no phase separation was detected. Photothermal diffraction spectroscopy revealed that the optical absorption coefficient was very low in the subgap region, 7\times 10^{1} cm<sup>-1</sup>, suggesting the suppression of defect formation. Finally, a TVT-processed thin film was used as an absorber in a solar cell, and a conversion efficiency of 6.9% was achieved.
- 2013-07-25
著者
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Tsuji Ryotaro
Kaneka Corporation
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SEO Yuichi
Department of Systems Innovation, Graduate School of Engineering Science, Osaka University
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Okamoto Hiroaki
Department of Advanced Materials and Science, Faculty of Engineering, Yamaguchi University
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TSUTSUMI Yasuo
Department of Electrical and Computer Engineering, Akashi National College of Technology
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KONISHI Takafumi
Department of Systems Innovation, Graduate School of Engineering Science, Osaka University
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Terai Kengo
Department of Electrical and Computer Engineering, Akashi National College of Technology, Akashi, Hyogo 674-8501, Japan
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Tsuji Ryotaro
Kaneka Fundamental Technology Alliance Research Laboratories, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Toyama Toshihiko
Kaneka Fundamental Technology Alliance Research Laboratories, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Nakashima Yuto
Department of Electrical and Computer Engineering, Akashi National College of Technology, Akashi, Hyogo 674-8501, Japan
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Tsutsumi Yasuo
Department of Electrical and Computer Engineering, Akashi National College of Technology, Akashi, Hyogo 674-8501, Japan
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