Importance of Starting Procedure for Film Growth in Substrate-Type Microcrystalline-Silicon Solar Cells
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概要
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The starting procedure of hydrogenated microcrystalline-silicon (μc-Si:H) film growth at a high rate has been controlled in a plasma-enhanced chemical vapor deposition process to improve the optoelectronic properties of the resulting n/i interface as well as the intrinsic bulk layer in μc-Si:H-based substrate-type (n--i--p) solar cells. The electron temperature, monitored using optical emission spectroscopy, in the plasma during film growth is successfully controlled by changing the starting procedure, i.e., gradual SiH4 introduction and slow power application, leading to the preparation of high-quality μc-Si:H films with a low dangling-bond defect density. Reduction of the defect density in the intrinsic layer and improvement of the optoelectronic properties at the n/i interface are demonstrated through the fabrication of single-junction n--i--p solar cells showing high photovoltaic performance.
- 2011-04-25
著者
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Sobajima Yasushi
Department Of Systems Innovation Graduate School Of Engineering Science Osaka University
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Matsuda Akihisa
Department Of Chemistry Graduate School Of Science Tohoku University
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Okamoto Hiroaki
Department of Advanced Materials and Science, Faculty of Engineering, Yamaguchi University
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Matsuda Akihisa
Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
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Sada Chitose
Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
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Chantana Jakapan
Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
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Tsutsui Yuichi
Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
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