Effects of Growth Parameters on Oxygen Incorporation into InGaAlP Grown by Metalorganic Chemical Vapor Deposition

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1993-01-30

著者

• Nakata Y

  Fujitsu Ltd. Atsugi Jpn

• Okajima M

  Toshiba Corporation Advanced Semiconductor Devices Research Laboratories

• NISHIKAWA Yukie

  Research and Development Center, Toshiba Corporation

• OKAJIMA Masaki

  Research and Development Center, Toshiba Corporation

• Suzuki M

  Shizuoka Univ. Hamamatsu

• Onomura M

  Toshiba Corporation Advanced Semiconductor Devices Research Laboratories

• Okajima M

  Toshiba Corp. Kawasaki

• Okajima Masaki

  Research And Development Center Toshiba Corporation

• Nishikawa Y

  Toshiba Corp. Kawasaki Jpn

• Nishikawa Y

  Materials And Devices Research Laboratories Toshiba Corporation

• Nishikawa Yukie

  Research & Development Center Toshiba Corporation

• SUZUKI Mariko

  Research and Development Center, Toshiba Corporation

• Suzuki Mariko

  Advanced Semiconductor Devices Research Laboratories R&d Center Toshiba Corporation

• Suzuki M

  Department Of Electronics Graduate School Of Engineering Tohoku University

• Suzuki Mariko

  Research And Development Center Toshiba Corporation

• Onomura M

  Univ. Tsukuba

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