Effects of Substrate Misorientation on Improvement of Electrical Properties in Zn-Doped InAlP Alloys

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1994-01-30

著者

• ITAYA Kazuhiko

  Research and Development Center, Toshiba Corporation

• OKAJIMA Masaki

  Research and Development Center, Toshiba Corporation

• Okajima Masaki

  Research And Development Center Toshiba Corporation

• Itaya Kazuhiko

  Research And Development Center Toshiba Corporation

• SUZUKI Mariko

  Research and Development Center, Toshiba Corporation

• Suzuki Mariko

  Research And Development Center Toshiba Corporation

関連論文

• High-Power InGaAIP Laser Diodes for High-Density Optical Recording : Visible Lasers
• High-Power InGaAlP Laser Diodes for High-Density Optical Recording
• Reliable High-Power Operation of InGaAlP Visible Light Laser Diodes with Strained Active Layer
• Effects of Growth Parameters on Oxygen Incorporation into InGaAlP Grown by Metalorganic Chemical Vapor Deposition
• Effects of Substrate Misorientation on Improvement of Electrical Properties in Zn-Doped InAlP Alloys
• High-Efficiency InGaAlP Visible Light-Emitting Diodes
• Astigmatism in Ridge-Stripe InGaAlP Laser Diodes (SOLID STATE DEVICES AND MATERIALS 1)
• Long-Term Reliability Tests for InGaAlP Visible Laser Diodes

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