Effect of RF Bias on Low-Temperature Synthesis of Aluminium Nitride Film by Hollow Cathode Discharge-Type Ion Plating
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-12-15
著者
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Suzuki M
Shizuoka Univ. Hamamatsu
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Ogawa Kenichi
Seiko Instruments Inc.
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岸 眞人
東京大学大学院工学系研究科
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岸 真人
東京大学電子工学科
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Ogawa Ken'ichi
Dep.bot. Fac.sci. Kyoto Univ.
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Suzuki Mariko
Advanced Semiconductor Devices Research Laboratories R&d Center Toshiba Corporation
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Ogawa K
Department Of Advanced Materials Science Faculty Of Engineering Kagawa University
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KISHI Matsuo
Seiko Instruments Inc.,
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SUZUKI Mizuaki
Seiko Instruments Inc.,
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Suzuki M
Department Of Electronics Graduate School Of Engineering Tohoku University
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Ogawa Kenichi
Dep.bot. Fac.sci. Kyoto Univ.
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Ogawa Ken-ichi
Dep.bot. Fac.sci. Kyoto Univ.
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