Characteristics of Mg-Doped GaN and AlGaN Grown by H_2-Ambient and N_2-Ambient Metalorganic Chemical Vapor Deposition
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-07-15
著者
-
ITAYA Kazuhiko
Toshiba Corporation, Advanced Semiconductor Devices Research Laboratories
-
SUZUKI Mariko
Advanced Semiconductor Devices Research Laboratories, R&D Center, Toshiba Corporation
-
SUGIURA Lisa
Advanced Semiconductor Devices Research Laboratories, R&D Center, Toshiba Corporation
-
ITAYA Kazuhiko
Advanced Semiconductor Devices Research Laboratories, R&D Center, Toshiba Corporation
-
ISHIKAWA Masayuki
Advanced Semiconductor Devices Research Laboratories, R&D Center, Toshiba Corporation
-
Suzuki M
Shizuoka Univ. Hamamatsu
-
Suzuki M
Department Of Electronic Engineering Faculty Of Engineering Hokkaido University
-
Itaya K
Toshiba Corporation Advanced Semiconductor Devices Research Laboratories
-
Nishio Joji
Advanced Semiconductor Devices Research Laboratories R&d Center Toshiba Corporation
-
Nishio J
Toshiba Corp. Kawasaki Jpn
-
Sugiura Lisa
Advanced Semiconductor Devices Research Laboratories R&d Center Toshiba Corporation
-
Suzuki Mitsuru
Cryogenic Centre University Of Tokyo
-
Ishikawa M
Institute For Solid State Physics The University Of Tokyo
-
Ishikawa Mitsuo
Department Of Chemical Technology Kurashiki University Of Science And Arts
-
Suzuki M
Sci. Univ. Tokyo Chiba Jpn
-
Suzuki M
Research Center Asahi Glass Co. Ltd.
-
Itaya Kazuhiko
Materials And Devices Research Laboratories Research And Development Center Toshiba Corporation
-
Kokubun Yoshihiro
Advanced Semiconductor Devices Research Laboratories R&d Center Toshiba Corporation
-
Ishikawa Masayuki
Toshiba Corporation Advanced Semiconductor Devices Research Laboratories
-
Suzuki Mariko
Advanced Semiconductor Devices Research Laboratories R&d Center Toshiba Corporation
-
Suzuki M
Research Center Sony Corporation
-
NISHINO Johji
Advanced Semiconductor Devices Research Laboratories, R&D Center, Toshiba Corporation
-
Suzuki M
Department Of Electronics Graduate School Of Engineering Tohoku University
-
Kokubun Yoshihiro
Department Of Electronic Engineering Faculty Of Engineering Tohoku Unuversity
-
Ishikawa M
Toshiba Corporation Advanced Semiconductor Devices Research Laboratories
-
Nishio Johji
Advanced Semiconductor Devices Research Laboratories, R&D Center, Toshiba Corporation
-
Nishio Johji
Advanced Semiconductor Devices Research Laboratories, R&D Center, Toshiba Corporation
関連論文
- Direct Transfer of Plasmid DNA from Intact Yeast Spheroplasts into Plant Protoplasts : GENE STRUCTURE AND EXPRESSION
- Thermal Analysis for GaN Laser Diodes
- Analysis of Device Characteristics for InGaN Semiconductor Lasers
- Reactive Ion Beam Etching and Overgrowth Process in the Fabrication of InGaN Inner Stripe Laser Diodes
- Reactive Ion Beam Etching and Overgrowth Process for Fabrication of InGaN Inner Stripe Laser Diodes
- Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire Substrates
- The Influence of Surface Treatment on the Quality of Pd/Au Contacts to p-type ZnSe
- Surface Preparation Effects for Molecular Beam Epitaxial Growth of ZnSe Layers on InGaP Layers
- Highly Reliable Operation of InGaP/InGaAlP Multi-Quantum-Well Visible Laser Diodes
- High-Power InGaAIP Laser Diodes for High-Density Optical Recording : Visible Lasers
- High-Power InGaAlP Laser Diodes for High-Density Optical Recording
- Reliable High-Power Operation of InGaAlP Visible Light Laser Diodes with Strained Active Layer
- Highly Reliable Transverse-Mode Stabilized InGaAlP Visible Light Laser Diodes at High-Power Operation
- Addition of New Pinning Center to Unidirectionally Melt Solidified Y-Ba-Cu-O Superconductor
- Preparation of Y-Ba-Cu-O Superconductors with High Critical Current Density by Unidirectional Melt Solidification
- A Simple Method of Fabricating Preferentially Oriented YBa_2Cu_3O_ Film on Silver Substrates
- Simulation of Rotating Magnetic Field Current Drive Using Multilayer Model
- Measurement of Electron Density and Temperature of Plasma with RF Current Drive by Alfven Wave
- Effect of Lattice Mismatch on the Solidus Compositions of Ga_xIn_P Liquid Phase Epitaxial Crystals
- Spectral Fluctuations in the Stokes Output Pulse Pumped with a High-Pressure CO_2 Laser
- Equivalent Circuit Model for Positive/Negative Reflection-Type SAW Reflectors : SAW and BAW Materials, Devices and Theories
- Equivalent Networks for Surface Acoustic Wave Metallic Gratings : SAW and Communication Devices
- Finite-Element Analysis of Periodic Waveguides for Acoustic Waves : SAW and Communication Devices
- FIB Exposure Characteristics of LB Film
- Effects of Growth Parameters on Oxygen Incorporation into InGaAlP Grown by Metalorganic Chemical Vapor Deposition
- Rare-Earth(RE)-Barium Solubility Behaviour in Y(Ba_RE_x)Cu_3O_ and Sm(Ba_RE_x)Cu_3O_ : Electrical Properties of Condensed Matter
- Absence of Solid Solution of the Type, Y(Ba_RE_x)Cu_3O_ and Its Possible Implications : Electrical Properties of Condensed Matter
- Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire-Like Lasers
- Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire Lasers
- Fabrication of Chalcogenide Amorphous Semiconductor Diodes Using Low Temperature Thermal Diffusion Techniques
- Chalcogenide Amorphous Semiconductor Diodes
- Diffusion Profile of Some Metal Ions in Chalcogenide Amorphous Semiconductors
- Hybrid-Type InGaAlP/GaAs Distributed Bragg Reflectors for InGaAlP Light-Emitting Diodes
- Emission Properties of InGaAlP Visible Light-Emitting Diodes Employing a Multiquantum-Well Active Layer
- Ultrasonic Studies of the High-T_c Superconductor YBa_2Cu_3O_y : Physical Acoustics
- Sound Velocity and Attenuation in YBa_2Cu_3O_y : Thermal and Statistical Properties
- Operating Tolerance for Laser Power and Temperature of Phase Change Erasable Optical Disk : Media
- Ge-Te-Sb Based Overwritable Phase Change Optical Disk : PHASE CHANGE MEDIA I
- Metalorganic Vapor Phase Epitaxial Growth for High Electron Mobility Transistor LSIs
- AlGaAs/GaAs and AlGaAs/InGaAs/GaAs High Electron Mobility Transistors Grown by Metalorganic Vapor Phase Epitaxy Using Tertiarybutylarsine
- MOVPE Growth of AlGaAs /GaAs Heterostructures for HEMT LSI
- Carbon-Nanotube Tip for Highly-Reproducible Imaging of Deoxyribonucleic Acid Helical Turns by Noncontact Atomic Force Microscopy
- Structures of an Oxygen-Deficient TiO_2(110) Surface Studied by Noncontact Atomic Force Microscopy
- Effect of RF Bias on Low-Temperature Synthesis of Aluminium Nitride Film by Hollow Cathode Discharge-Type Ion Plating
- Low-Temperature Synthesis of Aluminium Nitride Film by HCD-Type Ion Plating
- Domain Motion of Ferroelectricity of Bi_2SrTa_2O_9 Single Crystals under an AC-Voltage Electric Field
- Study of Glass Transition in Mn-Doped Ge_Te_ Glass by Electron Spin Resonance
- Characteristics of Mg-Doped GaN and AlGaN Grown by H_2-Ambient and N_2-Ambient Metalorganic Chemical Vapor Deposition
- Ferroelectricity of Bi_2SrTa_2O_9 Single Crystals Grown by the Self-Flux Method
- ESR Study of Glass Transition in Mn-Doped Se_Te_ Chalcogenide Glass in Non-Isothermal Process
- Preparation of Layered Ferroelectric Bi_2SrTa_2O_9 Single-Crystal Platelets
- Optical Gain of Wurtzite GaN/AlGaN Quantum Well Lasers
- Optical Gain Calculation of Wurtzite GaN/AlGaN Quantum Well Laser
- Photoelectron Spectroscopy of EuBa_2Cu_3O_ Thin Film Surfaces Treated by an Electron Cyclotron Resonance Oxygen Ion Beam
- Water-Immersion-Induced Surface Reactiorns of EuBa_2Cu_3O_y Thin Films
- Observation of GaAs(110) Surface by an Ultrahigh-Vacuum Atomic Force Microscope
- Fabrication of Josephson Junctions by Focused Electron Beam Irradiation
- Atomically Resolved Image of Cleaved GaAs(110) Surface Observed with an Ultrahigh Vacuum Atomic Force Microscope
- Observation of Atormic Defects on LiF(100) Surface with Ultrahigh Vacuum Atomic Force Microscope (UHV AFM)
- Fabrication of DC Supereonducting Quantum Interference Devices with Hybrid Structure of Polycrystalline Y_1Ba_2Cu_3O_x Films and Epitaxial Y_1Ba_2Cu_3O_x Films
- Enhancement of Nitrogen Incorporation in ZnSe Grown on Misoriented GaAs Substrates by Molecular Beam Epitaxy
- Atomic Force Microscopy of Single-Walled Carbon Nanotubes Using Carbon Nanotube Tip
- Multi-Wafer Growth of HEMT LSI Quality AlGaAs/GaAs Heterostructures by MOCVD
- Evaluation of Overlay Accuracy for 100-nm Ground Rule in Proximity X-Ray Lithography
- Effects of C_6O Doping on Electrical and Optical Properties of Poly[(disilanylene)oligophenylenes]
- Optical Properties and El Characteristics of Poly[(disilanylene)oligophenylenes]
- Preparation of (Pb, La)(Zr, Ti)O_3 Ferroelectric Films by RF Sputtering on Large Substrate
- A New Perpendicular Magnetic Film of Co-O by Evaporation
- Performance of X-Ray Stepper for Next-Generation Lithography
- High Field Magnetoconductivity in (TMTSF)_2CIO_4
- A Novel Reflective Liquid Crystal Display with High Resolution and Full Color Capability
- Current-Voltage Characteristics of p-p Isotype InGaAlP/GaAs Heterojunction with a Large Valence-Band Discontinuity
- High-Efficiency InGaAlP Visible Light-Emitting Diodes
- Astigmatism in Ridge-Stripe InGaAlP Laser Diodes (SOLID STATE DEVICES AND MATERIALS 1)
- A New Transverse-Mode Stabilized InGaAlP Visible Light Laser Diode Using p-p Isotype Heterobarrier Blocking : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials
- High-Q Piezoelectrically Actuated RF MEMS Tunable Capacitor
- Low-Voltage Operated Piezoelectric Tunable Capacitor for Reconfigurable RF Systems
- Shubnikov-de Haas Effect in (TMTSF)_2CIO_4
- Optical Design for Soft X-Ray Projection Lithography : X-Ray Lithography
- Optimum Dark-State Voltage for Wide-Viewing-Arngle Optically-Compensated-Bend-Mode Liquid-Crystal-Displays
- Liquid Phase Epitaxy of Miscible and Immiscible GaInPAs Alloys on (100)-Oriented GaP_xAs_ (x=0, 0.2, 0.4) Substrates
- Optical Design for Soft X-Ray Projection Lithography
- Internal Stress Distribution Estimation in Liquid-Encapsulated Czochralski Grown GaAs Single Crystals Using Measured Temperature on Dummy Crystals
- Influence of H_2O on the SiO_2 Growth by Parallel-Resonant RF Plasma Oxidation
- Enhanced Growth of Silicon Dioxide Films by Parallel-Resonant RF Plasmas
- Corrugation-Pitch-Modulated Distributed Feedback Lasers with Ultranarrow Spectral Linewidth
- Effect of Mechanical Vibration on Patterning Characteristics in Synchrotron Radiation Lithography
- Overlay Repeatability in Mix-and-Match Exposure Using the SR Stepper: SS-1
- Nonbolometric Infrared Detection in La_Sr_xCUO_4 and YBa_2Cu_3O_y Epitaxial Thin Films
- Optical Detection in High-T_c Superconducting Thin Films : II-B Optical Spectroscopies : II Oxide Superconductors; Experiments II : Electronic States
- Comment to Articles by Masatsugu Suzuki and Sei-ichi Tanuma (J. Phys. Soc. Jpn. 44 (1978) 1539 and 45 (1978) 1645) on the Static Skin Effect in Bismuth
- Phase Inversion of Shubnikov-de Haas Oscillation in Bismuth
- Anomalous Surface Tension of Liquid ^3He at Low Temperatures : I. QUANTUM LIQUIDS AND SOLIDS : Interfaces of He
- Surface Waves on Liquid Helium : Physical Acoustics
- Direct Observation of Crystallization Process from Amorphous Y-Ba-Cu-O Film by means of Optical Microscopy
- Bi-Level Structures for Focused Ion Beam Using Maskless Ion Etching
- High Field Properties of Superconducting Nb_3Ge Films Prepared by Chemical Vapor Deposition
- Critical Current Density in Superconducting Nb_3Ge and NbN Films at Fields upto 30 T
- Effect of Dilute Antimony on Magnetoconductivity of Bismuth at Low Temperatures
- Anomalous Magnetoresistance in Bi_Sb_x under Quantum Limit