Hybrid-Type InGaAlP/GaAs Distributed Bragg Reflectors for InGaAlP Light-Emitting Diodes

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1994-11-15

著者

• HATAKOSHI Gen-ichi

  Toshiba Corporation, Advanced Semiconductor Devices Research Laboratories

• ITAYA Kazuhiko

  Toshiba Corporation, Advanced Semiconductor Devices Research Laboratories

• HATAKOSHI Gen-ichi

  Materials and Devices Research Laboratories, Toshiba Corporation

• Itaya K

  Toshiba Corporation Advanced Semiconductor Devices Research Laboratories

• Itaya Kazuhiko

  Materials And Devices Research Laboratories Research And Development Center Toshiba Corporation

• SUGAWARA Hideto

  Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporation

• Hatakoshi Gen-ichi

  Toshiba Corporation Advanced Semiconductor Devices Research Laboratories

• Sugawara H

  Toshiba Corp. Kawasaki Jpn

• Sugawara Hideto

  Materials And Devices Research Laboratories Research And Development Center Toshiba Corporation

関連論文

• Thermal Analysis for GaN Laser Diodes
• Analysis of Device Characteristics for InGaN Semiconductor Lasers
• Reactive Ion Beam Etching and Overgrowth Process in the Fabrication of InGaN Inner Stripe Laser Diodes
• Reactive Ion Beam Etching and Overgrowth Process for Fabrication of InGaN Inner Stripe Laser Diodes
• Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire Substrates
• The Influence of Surface Treatment on the Quality of Pd/Au Contacts to p-type ZnSe
• Schottky Barrier Height Reduction for p-ZnSe Contacts by Sulfur Treatment
• Surface Preparation Effects for Molecular Beam Epitaxial Growth of ZnSe Layers on InGaP Layers
• Highly Reliable Operation of InGaP/InGaAlP Multi-Quantum-Well Visible Laser Diodes
• High-Power InGaAIP Laser Diodes for High-Density Optical Recording : Visible Lasers
• High-Power InGaAlP Laser Diodes for High-Density Optical Recording
• Reliable High-Power Operation of InGaAlP Visible Light Laser Diodes with Strained Active Layer
• Highly Reliable Transverse-Mode Stabilized InGaAlP Visible Light Laser Diodes at High-Power Operation
• Hybrid-Type InGaAlP/GaAs Distributed Bragg Reflectors for InGaAlP Light-Emitting Diodes
• Emission Properties of InGaAlP Visible Light-Emitting Diodes Employing a Multiquantum-Well Active Layer
• Characteristics of Mg-Doped GaN and AlGaN Grown by H_2-Ambient and N_2-Ambient Metalorganic Chemical Vapor Deposition
• Enhancement of Nitrogen Incorporation in ZnSe Grown on Misoriented GaAs Substrates by Molecular Beam Epitaxy
• Current-Voltage Characteristics of p-p Isotype InGaAlP/GaAs Heterojunction with a Large Valence-Band Discontinuity
• High-Efficiency InGaAlP Visible Light-Emitting Diodes
• Astigmatism in Ridge-Stripe InGaAlP Laser Diodes (SOLID STATE DEVICES AND MATERIALS 1)
• A New Transverse-Mode Stabilized InGaAlP Visible Light Laser Diode Using p-p Isotype Heterobarrier Blocking : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials
• Low-Voltage Operated Piezoelectric Tunable Capacitor for Reconfigurable RF Systems
• Terahertz Wave Enhanced Transmission through a Single Subwavelength Aperture with Periodic Surface Structures
• Compensated-Strain Multiquantum-Well Active Layer for InGaAlP-Based Visible Light Emitting Diodes
• Analysis of Auger Recombination for Wurtzite InGaN
• Analysis of Auger Recombination for Wurtzite InGaN
• Schottky Barrier Height Reduction for p-ZnSe Contacts by Sulfur Treatment
• Terahertz Wave Enhanced Transmission through a Single Subwavelength Aperture with Periodic Surface Structures
• Analysis of Auger Recombination in Wurtzite InGaN

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