SUGAWARA Hideto | Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporation
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概要
- 同名の論文著者
- Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporationの論文著者
関連著者
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HATAKOSHI Gen-ichi
Toshiba Corporation, Advanced Semiconductor Devices Research Laboratories
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ITAYA Kazuhiko
Toshiba Corporation, Advanced Semiconductor Devices Research Laboratories
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Itaya K
Toshiba Corporation Advanced Semiconductor Devices Research Laboratories
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Itaya Kazuhiko
Materials And Devices Research Laboratories Research And Development Center Toshiba Corporation
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SUGAWARA Hideto
Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporation
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Hatakoshi Gen-ichi
Toshiba Corporation Advanced Semiconductor Devices Research Laboratories
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Sugawara H
Toshiba Corp. Kawasaki Jpn
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HATAKOSHI Gen-ichi
Materials and Devices Research Laboratories, Toshiba Corporation
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Sugawara Hideto
Materials And Devices Research Laboratories Research And Development Center Toshiba Corporation
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HATAKOSHI Gen-ichi
Research and Development Center, Toshiba Corporation
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ITAYA Kazuhiko
Research and Development Center, Toshiba Corporation
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ISHIKAWA Masayuki
Research and Development Center, Toshiba Corporation
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Itaya Kazuhiko
Research And Development Center Toshiba Corporation
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Ishikawa M
Institute For Solid State Physics The University Of Tokyo
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Ishikawa Mitsuo
Department Of Chemical Technology Kurashiki University Of Science And Arts
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Ishikawa Masayuki
Toshiba Corporation Advanced Semiconductor Devices Research Laboratories
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SUGAWARA Hideto
Research and Development Center, Toshiba Corporation
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Ishikawa M
Toshiba Corporation Advanced Semiconductor Devices Research Laboratories
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Hatakoshi Gen-ichi
Research And Development Center Toshiba Corporation
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Ishikawa Masayuki
Research & Development Center Toshiba Corporation
著作論文
- Hybrid-Type InGaAlP/GaAs Distributed Bragg Reflectors for InGaAlP Light-Emitting Diodes
- Emission Properties of InGaAlP Visible Light-Emitting Diodes Employing a Multiquantum-Well Active Layer
- High-Efficiency InGaAlP Visible Light-Emitting Diodes