ITAYA Kazuhiko | Toshiba Corporation, Advanced Semiconductor Devices Research Laboratories

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概要

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著作論文

Thermal Analysis for GaN Laser Diodes
Analysis of Device Characteristics for InGaN Semiconductor Lasers
Reactive Ion Beam Etching and Overgrowth Process in the Fabrication of InGaN Inner Stripe Laser Diodes
Reactive Ion Beam Etching and Overgrowth Process for Fabrication of InGaN Inner Stripe Laser Diodes
Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire Substrates
Highly Reliable Operation of InGaP/InGaAlP Multi-Quantum-Well Visible Laser Diodes
High-Power InGaAIP Laser Diodes for High-Density Optical Recording : Visible Lasers
High-Power InGaAlP Laser Diodes for High-Density Optical Recording
Reliable High-Power Operation of InGaAlP Visible Light Laser Diodes with Strained Active Layer
Highly Reliable Transverse-Mode Stabilized InGaAlP Visible Light Laser Diodes at High-Power Operation
Hybrid-Type InGaAlP/GaAs Distributed Bragg Reflectors for InGaAlP Light-Emitting Diodes
Emission Properties of InGaAlP Visible Light-Emitting Diodes Employing a Multiquantum-Well Active Layer
Characteristics of Mg-Doped GaN and AlGaN Grown by H_2-Ambient and N_2-Ambient Metalorganic Chemical Vapor Deposition
Current-Voltage Characteristics of p-p Isotype InGaAlP/GaAs Heterojunction with a Large Valence-Band Discontinuity
High-Efficiency InGaAlP Visible Light-Emitting Diodes
Astigmatism in Ridge-Stripe InGaAlP Laser Diodes (SOLID STATE DEVICES AND MATERIALS 1)
A New Transverse-Mode Stabilized InGaAlP Visible Light Laser Diode Using p-p Isotype Heterobarrier Blocking : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials
Low-Voltage Operated Piezoelectric Tunable Capacitor for Reconfigurable RF Systems

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