HATAKOSHI Gen-ichi | Toshiba Corporation, Advanced Semiconductor Devices Research Laboratories

スポンサーリンク

概要

関連著者

もっと見る

著作論文

Thermal Analysis for GaN Laser Diodes
Analysis of Device Characteristics for InGaN Semiconductor Lasers
Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire Substrates
The Influence of Surface Treatment on the Quality of Pd/Au Contacts to p-type ZnSe
Surface Preparation Effects for Molecular Beam Epitaxial Growth of ZnSe Layers on InGaP Layers
Highly Reliable Operation of InGaP/InGaAlP Multi-Quantum-Well Visible Laser Diodes
High-Power InGaAIP Laser Diodes for High-Density Optical Recording : Visible Lasers
High-Power InGaAlP Laser Diodes for High-Density Optical Recording
Reliable High-Power Operation of InGaAlP Visible Light Laser Diodes with Strained Active Layer
Highly Reliable Transverse-Mode Stabilized InGaAlP Visible Light Laser Diodes at High-Power Operation
Hybrid-Type InGaAlP/GaAs Distributed Bragg Reflectors for InGaAlP Light-Emitting Diodes
Emission Properties of InGaAlP Visible Light-Emitting Diodes Employing a Multiquantum-Well Active Layer
Enhancement of Nitrogen Incorporation in ZnSe Grown on Misoriented GaAs Substrates by Molecular Beam Epitaxy
Current-Voltage Characteristics of p-p Isotype InGaAlP/GaAs Heterojunction with a Large Valence-Band Discontinuity
High-Efficiency InGaAlP Visible Light-Emitting Diodes
Astigmatism in Ridge-Stripe InGaAlP Laser Diodes (SOLID STATE DEVICES AND MATERIALS 1)
A New Transverse-Mode Stabilized InGaAlP Visible Light Laser Diode Using p-p Isotype Heterobarrier Blocking : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials
Terahertz Wave Enhanced Transmission through a Single Subwavelength Aperture with Periodic Surface Structures

もっと見る

スポンサーリンク