Analysis of Auger Recombination for Wurtzite InGaN

スポンサーリンク

概要

論文の詳細を見る
2012-07-25

著者

関連論文

Thermal Analysis for GaN Laser Diodes
Analysis of Device Characteristics for InGaN Semiconductor Lasers
Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire Substrates
The Influence of Surface Treatment on the Quality of Pd/Au Contacts to p-type ZnSe
Surface Preparation Effects for Molecular Beam Epitaxial Growth of ZnSe Layers on InGaP Layers
Highly Reliable Operation of InGaP/InGaAlP Multi-Quantum-Well Visible Laser Diodes
High-Power InGaAIP Laser Diodes for High-Density Optical Recording : Visible Lasers
High-Power InGaAlP Laser Diodes for High-Density Optical Recording
Reliable High-Power Operation of InGaAlP Visible Light Laser Diodes with Strained Active Layer
Highly Reliable Transverse-Mode Stabilized InGaAlP Visible Light Laser Diodes at High-Power Operation
Hybrid-Type InGaAlP/GaAs Distributed Bragg Reflectors for InGaAlP Light-Emitting Diodes
Emission Properties of InGaAlP Visible Light-Emitting Diodes Employing a Multiquantum-Well Active Layer
Enhancement of Nitrogen Incorporation in ZnSe Grown on Misoriented GaAs Substrates by Molecular Beam Epitaxy
Current-Voltage Characteristics of p-p Isotype InGaAlP/GaAs Heterojunction with a Large Valence-Band Discontinuity
High-Efficiency InGaAlP Visible Light-Emitting Diodes
Astigmatism in Ridge-Stripe InGaAlP Laser Diodes (SOLID STATE DEVICES AND MATERIALS 1)
A New Transverse-Mode Stabilized InGaAlP Visible Light Laser Diode Using p-p Isotype Heterobarrier Blocking : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials
Analysis of Auger Recombination for Wurtzite InGaN
Analysis of Auger Recombination for Wurtzite InGaN
Terahertz Wave Enhanced Transmission through a Single Subwavelength Aperture with Periodic Surface Structures
Analysis of Auger Recombination in Wurtzite InGaN

もっと見る

スポンサーリンク