Analysis of Auger Recombination in Wurtzite InGaN
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概要
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Auger recombination was analyzed for wurtzite InGaN, where a higher conduction band has a significant effect on the Auger recombination coefficient. It was shown that the carrier density and temperature dependences show anomalous characteristics near the 450-nm-wavelength region.
- 2013-08-25
著者
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Hatakoshi Gen-ichi
Toshiba Corporation Advanced Semiconductor Devices Research Laboratories
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NUNOUE Shinya
Toshiba R&D Center
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Hatakoshi Gen-ichi
Toshiba R&D Center, Kawasaki 212-8582, Japan
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