Compensated-Strain Multiquantum-Well Active Layer for InGaAlP-Based Visible Light Emitting Diodes
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概要
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Compensated-strain multiquantum-well (CS-MQW) structures have been investigated as the active region for InGaAlP-based visible light emitting diodes (LEDs). Strained layers for the LED active region were successfully grown by metalorganic chemical vapor deposition (MOCVD) with a compensated-strain structure. The total thickness of the strained active region was six times thicker than the critical thickness of the single strained layer. The precise control of a 20-quantum-well structure with tensile-strained wells and compressive-strained barriers was confirmed by X-ray diffraction measurements, A high-efficiency short-wavelength (585 nm) light emission was obtained for a current injection LED with the CS-MQW active region.
- 社団法人応用物理学会の論文
- 1995-11-01
著者
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Sugawara Hideto
Materials And Devices Research Laboratories Research And Development Center Toshiba Corporation
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Ishikawa Masayuki
Materials And Devices Research Laboratories Research And Development Center Toshiba Corporation
関連論文
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- Current-Voltage Characteristics of p-p Isotype InGaAlP/GaAs Heterojunction with a Large Valence-Band Discontinuity
- Compensated-Strain Multiquantum-Well Active Layer for InGaAlP-Based Visible Light Emitting Diodes
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