Schottky Barrier Height Reduction for p-ZnSe Contacts by Sulfur Treatment
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概要
- 論文の詳細を見る
We have demonstrated the relationship between the structural and electrical properties of the chemically treated p-type ZnSe surface. The unstable Se-rich ZnSe surface, formed by an acid etchant, is shown to be removed by sulfur treatment. The sulfur treatment has been found to have the effect of lowering the Schottky barrier height at the Au/p-type ZnSe interface. This barrier lowering has been found to be effective in reducing the operation voltage of the ZnSe-based devices.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-02-28
著者
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ONOMURA Masaaki
Materials and Devices Research Laboratories, Toshiba Corporation
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SAITO Shinji
Materials and Devices Research Laboratories, Toshiba Corporation
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NISHIKAWA YUKIE
Materials and Devices Research Laboratories, Toshiba Corporation
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HATAKOSHI Gen-ichi
Materials and Devices Research Laboratories, Toshiba Corporation
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Rennie John
Materials And Devices Research Laboratories Toshiba Corporation
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Parbrook Peter
Materials And Devices Research Laboratories Research And Development Certter Toshiba Corporation
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Ishikawa Masayuki
Materials And Devices Research Laboratories Research And Development Center Toshiba Corporation
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Ishikawa Masayuki
Materials and Devices Research Laboratories, Toshiba Corporation, 1, Komukai Toshiba-cho,
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Rennie John
Materials and Devices Research Laboratories, Toshiba Corporation, 1, Komukai Toshiba-cho,
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Onomura Masaaki
Materials and Devices Research Laboratories, Toshiba Corporation, 1, Komukai Toshiba-cho,
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Hatakoshi Gen-ichi
Materials and Devices Research Laboratories, Toshiba Corporation, 1, Komukai Toshiba-cho,
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Parbrook Peter
Materials and Devices Research Laboratories, Toshiba Corporation, 1, Komukai Toshiba-cho,
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