Effects of Zn Electrical Activity on Band Gap Energy in Zn-Doped InGaAlP Grown by Metalorganic Chemical Vapor Deposition (SOLID STATE DEVICES AND MATERIALS 1)

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The effects of Zn electrical activity on band gap energy (E_g) and atomic arrangements have been studied for Zn-doped InGaAlP, grown by low-pressure metalorganic chemical vapor deposition. The E_g value increased with decreasing Zn electrical activity. The ordered structure on the column III sublattice was observed in samples whose Zn electrical activity was unity. The sample, which contained a sufficiently large amount of electrically inactive Zn, did not have the ordered structure. It is found that E_g and atomic arrangements are greatly affected by the amount of electrically inactive Zn.
社団法人応用物理学会の論文
1989-11-20