Effect of Leakage Current on Pulse-Width Characteristic in Q-Switched Two-Section AlGaAs Multiple-Quantum-Well Semiconductor Lasers

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1999-06-15

著者

• Suzuki Y

  Showa Shell Sekiyu K.k. Kanagawa

• Shimizu Masahiro

  Ulsi Development Center Mitsubishi Electric Corporation

• Mukai S

  Optoelectronic Division Electrotechnical Laboratory

• Suzuki Y

  Hitachi Ltd. Tokyo Jpn

• Watanabe M

  Hiroshima Univ. Higashi‐hiroshima Jpn

• Suzuki Y

  Optoelectronic Division Electrotechnical Laboratory

• SHIMIZU Mitsuaki

  Optoelectronic Division, Electrotechnical Laboratory

• MUKAI Seiji

  Optoelectronic Division, Electrotechnical Laboratory

• SUZUKI Yoshihiro

  Optoelectronic Division, Electrotechnical Laboratory

• WATANABE Masanobu

  Optoelectronic Division, Electrotechnical Laboratory

• Mukai S

  Electrotechnical Lab. Ibaraki Jpn

• Mukai Seiji

  Optoelectronic Division Electrotechnical Laboratory

• Shimizu M

  Advanced Industrial Science And Technology (aist) Power Electronics Research Center

• Shimizu Mitsuaki

  Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology

• HASAMA Toshifumi

  Optoelectronic Division, Electrotechnical Laboratory

• Watanabe Mahiko

  Department Of Applied Physics And Chemistry Faculty Of Engineering Hiroshima University

• SUZUKI Yoshifumi

  NTT Electrical Communications Laboratories

• Suzuki Yoshiichi

  Central Research And Development Laboratory Showa Shell Sekiyu K.k.

• Suzuki Yoshifumi

  Department Of Materials Science Faculty Of Engineering Kyushu Institute Of Technology

• Suzuki Yoshishige

  Joint Research Center For Atom Technology(jrcat)-national Institute For Advanced Interdisciplinary R

• Suzuki Yasuzou

  Nanotechnology Research Institute National Institute Of Advanced Industrial Science And Technology

• Hasama T

  National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn

関連論文

• MOCVD法により形成したPbTiO_3自己集合島の構造制御(新型不揮発性メモリー)
• 強誘電体ナノワイヤ及びナノアイランドの自発分極に関する研究 (平成21年度研究報告)
• ナノ強誘電体の基礎物性 : 現状と将来展望
• PbTiO_3- and Pb(Zr,Ti)O_3-Covered ZnO Nanorods
• MOCVD法によるPbTiO_3ナノ島作製とその強誘電性
• 24pYE-6 圧電応答顕微鏡でみる分域像(強誘電体分域の測定法の新展開と新しい分域像,シンポジウム,領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
• MOCVD法によるナノサイズ強誘電体の作製とその物性
• 強誘電体ナノ構造の作製とその物性
• 19aXC-4 HAADF STEM法を用いたSrTiO_3(100)/PbTiO_3強誘電体薄膜の原子構造組成解析(X線・粒子線(電子線),領域10,誘導体,格子欠陥,X線・粒子線,フォノン物性)
• 21pYN-2 強誘電体極薄膜及びナノ構造の作製とその物性(領域10シンポジウム : 強誘電体薄膜および界面における新しい現象とその応用,領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
• MOCVD法による強誘電体ナノ構造の形成とその物性(新型不揮発性メモリ)
• 29pXH-2 自己組織化による強誘電体PbTiO_3ナノ構造の形成と構造制御(領域10シンポジウム : ナノスケール構造を利用した物質創製-材料種の枠を超えて)(領域10)
• 圧電応答顕微鏡による強誘電体薄膜の観察と評価
• 21pXC-7 圧電応答顕微鏡による強誘電体薄膜の分極反転過程の観察と評価
• MOCVD法によるPb(Zr,Ti)O_3薄膜の低温成長と特性の改善(圧電デバイス・材料,強誘電体材料,有機エレクトロニクス,一般)
• MOCVD法によるPb(Zr,Ti)O_3極薄膜のエピタキシャル成長と電気的特性(物性,成膜,加工,プロセス : 強誘電体薄膜とデバイス応用)
• MOCVD法によるPb(Zr,Ti)0_3薄膜の低温成長と特性の改善(圧電デバイス・材料,強誘電体材料,有機エレクトロニクス,一般)
• Si基板上弗化物系サブバンド間遷移レーザの理論解析
• Si基板上弗化物系サブバンド間遷移レーザの理論解析(シリコン系量子効果デバイス,量子効果デバイス及び関連技術)
• Si基板上弗化物系サブバンド間遷移レーザの理論解析(シリコン系量子効果デバイス,量子効果デバイス及び関連技術)
• ナノ領域成長を用いたSi(100)基板上弗化物系共鳴トンネルダイオード(光・電子ナノデバイス)
• Si基板上(CdF_2/CaF_2)サブバンド間遷移レーザ構造のEL発光特性(光・電子ナノデバイス)
• ナノ領域成長を用いたSi(100)基板上弗化物系共鳴トンネルダイオード(光・電子ナノデバイス)
• Si基板上(CdF_2/CaF_2)サブバンド間遷移レーザ構造のEL発光特性(光・電子ナノデバイス)
• ローカルエピタキシー法によるCoSi_2/CaF_2三重障壁共鳴トンネルダイオードの微分負性抵抗特性(量子効果デバイス及び関連技術)
• ローカルエピタキシー法によるCoSi_2/CaF_2三重障壁共鳴トンネルダイオードの微分負性抵抗特性(量子効果デバイス及び関連技術)
• Si(100)基板上に形成されたCdF_2/CaF_2超ヘテロ構造による共鳴トンネルダイオードの室温微分負性抵抗特性(量子効果デバイス及び関連技術)
• Si(100)基板上に形成されたCdF_2/CaF_2超ヘテロ構造による共鳴トンネルダイオードの室温微分負性抵抗特性(量子効果デバイス及び関連技術)
• I層にMgOを用いたMIS及びMFIS構造の作製とその評価
• Antiferroelectric Liquid Crystals Having a Chiral Ring Structure
• Synthesis and Properties of Dimeric Antiferroelectric Liquid Crystals
• Synthesis of Aliphatic Polyurea Films by Vapor Deposition Polyrmerization and Their Piezoelectric Properties
• Tristable Switching in Surface Stabilized Ferroelectric Liquid Crystals with a Large Spontaneous Polarization : Condensed Matter
• Continuous Output Beam Steering in Vertical-Cavity Surface-Emitting Lasers with Two p-Type Electrodes by Controlling Injection Current Profile
• Interconnection Architecture Based on Beam-Steering Devices (Special Issue on Optical Interconnection)
• Implementation of Optical Ternary Logic Operations Using a Twin-Stripe Laser Diode
• Beam Scanning Binary Logic (OPTICAL COMPUTING 1)
• LPE Growth of AlGaAs-GaAs Quantum Well Heterostructures
• Diffusion Properties of Mg in Al_xGa_As
• Optical Ternary Memory and Logic Operation using a Twin-Stripe Laser Diode : FUTURE TECHNOLOGIES
• Multiferroism at Room Temperature in BiFeO_3/BiCrO_3(111) Artificial Superlattices
• Improvement of DC Characteristics in AlGaN/GaN Heterojunction Field-Effect Transistors Employing AlN Spacer Layer
• AIN/AlGaN/GaN Metal Insulator Semiconductor Heterostructure Field Effect Transistor
• Effects of High-k Passivation Films on AlGaN/GaN HEMT
• p-type InGaN Cap Layer for Normally-off Operation in AlGaN/GaN HFETs
• High Breakdown Voltage AlGaN/GaN MIS-HEMT with TiO_2/Si_3N_4 Gate Insulator
• High Speed AlGaN/GaN MIS-HEMT with High Drain and Gate Breakdown Voltages
• GaN Crystal Growth on Sapphire Substrate Using Islandlike GaN Buffer Formed by Repetition of Thin-Layer Low-Temperature Deposition and Annealing in rf-Plasma Molecular Beam Epitaxy
• Improvement of GaN Crystal Quality in RF-MBE Using Thin Low-Temperature-Grown GaN Buffer Layers
• Gate-Length Dependence of DC Characteristics in Submicron-Gate AlGaN/GaN HEMTs
• Roles of Si Irradiation during the Growth Interruption on GaN Film Qualities in Plasma-Assisted Molecular Beam Epitaxy : Semiconductors
• Indium Roles on the GaN Surface Studied Directly by Reflection High-Energy Electron Diffraction Observations : Semiconductors
• High-Quality GaN Layers on c-Plane Sapphire Substrates by Plasma-Assisted Molecular-Beam Epitaxy Using Double-Step AlN Buffer Process
• Temperature Characteristics AlGaN/GaN Heterojunction Field Effect Transistors
• Advantages of AlN/GaN Metal Insulator Semiconductor Field Effect Transistor using Wet Chemical Etching With Hot Phosphoric Acid : Semiconductors
• Optimization of GaN Growth with Ga-Polarity by Referring to Surface Reconstruction Reflection High-Energy Electron Diffraction Patterns : Semiconductors
• High-Quality InGaN Films Grown on Ga-Polarity GaN by Plasma-Assisted Molecular-Beam Epitaxy
• AlGaN/GaN Heterojunction High Electron Mobility Transistors Using Ga-Polarity Crystal Growth by Plasma-Assisted Molecular Beam Epitaxy
• Use of Multiple Paris of Gain and Saturable Absorber Regions for Semiconductor Optical-Pulse Compressor
• Essential Change in Crystal Qualities of GaN Films by Controlling Lattice Polarity in Molecular Beam Epitaxy
• Effect of Leakage Current on Pulse-Width Characteristic in Q-Switched Two-Section AlGaAs Multiple-Quantum-Well Semiconductor Lasers
• Characteristics of Cavity Round-Trip Time Pulses in Short-Cavity Q-Switched AlGaAs Multiple-Quantum-Well Semiconductor Lasers
• Analysis of Modes in a Vertical Cavity Surface Emitting Laser with Multilayer Bragg Reflectors
• Microstructure and Electrical Properties of (Pb, La)(Zr. Ti)O_3 Films Crystallized from Amorphous State by TWO-Step Postdeposition Annealing
• Effects of Pt/SrRuO_3 Top Electrodes on Ferroelectric Properties of Epitaxial(Pb, La)(Zr, Ti)O_3 Thin Films
• MOCVD法によるPb(Zr,Ti)0_3薄膜の低温成長と特性の改善(圧電デバイス・材料,強誘電体材料,有機エレクトロニクス,一般)
• MOCVD法によるPb(Zr,Ti)O_3薄膜の低温成長と特性の改善(圧電デバイス・材料,強誘電体材料,有機エレクトロニクス,一般)
• MOCVD法によるPb(Zr,Ti)O_3薄膜の低温成長と核付けが及ぼす効果
• Thermal Stability of SrRuO_3 Bottom Electrode and Electric Property of Pb(Zr, Ti)O_3 Thin Film Deposited on SrRuO_3
• Lifetime and Spin Relaxation Time Measurements of Micro-Fabricated GaAs Tips
• Fabrication of GaAs Microtips and Their Application to Spin-Polarized Scanning Tunneling Microscope
• Scalability of Gate/N^- Overlapped Lightly Doped Drain in Deep-Submicrometer Regime
• Subquarter-micrometer Dual Gate Complementary Metal Oxide Semiconductor Field Effect Transistor with Ultrathin Gate Oxide of 2 nm
• Effect of Strain in Epitaxially Grown SrRuO_3 Thin Films on Crystal Structure and Electric Properties
• High-Speed Convolution System for Real-Time Proximity Effect Correction
• Infrared Radiation Detector with YBa_2Cu_3O_x Thin Film
• Energy-Dispersive Synchrotron Radiation Topographic Observation of InAs/GaAs Lattice-Mismatched Layer
• X-ray Penetration Depth for Large Lattice-Mismatched Heteroepitaxial Layer by Dynamical Diffraction Theory using Computer Simulation
• Observations of Island Structures at the Initial Growth Stage of PbZr_xTi_O_3 Thin Films Prepared by Metalorganic Chemical Vapor Deposition
• Characterization of Polarity of Plasma-Assisted Molecular Beam Epitaxial GaN{0001}Film Using Coaxial Impact Collision Ion Scattering Spectroscopy
• Computer Simulation for Analysis of Lattice Polarity of Wurtzite GaN{0001} Film by Coaxial Impact Collision Ion Scattering Spectroscopy
• Terminating Structure of Plasma-Assisted Molecular Beam Epitaxial GaN{0001} Film Surface Identified by Coaxial Impact Collision Ion Scattering Spectroscopy
• Intergration of Terraced Laser Diode and Garnet Crystals by Wafer Direct Bonding
• Control of Levitation in Electromagnetic Levitators under Microgravity
• Pb(Zr, Ti)O_3薄膜を用いたMFIS構造における絶縁体膜の検討 : C-V 及び DLTS法による界面準位密度の測定
• Pb(Zr, Ti)O_3薄膜を用いたMFIS構造における絶縁体膜の検討 : C-V及びDLTS法による界面準位密度の測定
• MOCVD-Pb(Zr,Ti)O_3薄膜の電気的特性のグレインサイズ依存性
• MOCVD-Pb(Zr,Ti)O_3薄膜の電気的特性のグレインサイズ依存性
• Scanning Capacitance Microscopy as a Characterization Tool for Semiconductor Devices
• Crystalline and Ferroelectric Properties of Pb(Zr, Ti)O_3 Thin Films Grown by Low-Temperature Metalorganic Chemical Vapor Deposition
• Epitaxial Growth and Ferroelectric Properties of the 20-nm-Thick Pb(Zr, Ti)O_3 Film on SrTiO_3(100) with an Atomically Flat Surface by Metalorganic Chemical Vapor Deposition
• Low-Temperature Fabrication of Ir/Pb(Zr,Ti)O_3/Ir Capacitors Solely by Metalorganic Chemical Vapor Deposition
• Photo-Ring-Opening Efficiency of 2,2-Diphenyl-2H-1-benzopyran Evaluated from Addition Reactivity of Amines to Its Ring-Opened Isomers
• Formation and Photo-initiated Addition-reaction of Chromenyl Polymer Films for Molecular Mounting
• Depth-Sensitive X-Ray Scattering Topographic Observation of InAs Grown by Molecular Beam Epitaxy on GaAs
• Scanning Capacitance Microscopy as a Characterization Tool for Semiconductor Devices
• SiO_2/Si System Studied by Scanning Capacitance Microscopy
• Analysis of GaInAsP Surfaces by Contact-Angle Measurement for Wafer Direct Bonding with Garnet Crystals
• Direct Bonding between Quaternary Compound Semiconductor and Garnet Crystals for Integrated Optical Isolator
• Development of Alignment Layer for Antiferroelectric Liquid Crystal Display Devices

もっと見る 閉じる

スポンサーリンク