High-Speed Convolution System for Real-Time Proximity Effect Correction
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-12-30
著者
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Shimizu Masahiro
Ulsi Development Center Mitsubishi Electric Corporation
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Shimizu M
Advanced Industrial Science And Technology (aist) Power Electronics Research Center
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Shimizu Mitsuaki
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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Abe Takayuki
Advanced Ulsi Process Engineering Department Ii Process And Manufacturing Engineering Center Semicon
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HATTORI Yoshiaki
Advanced Research Laboratory, R&D Center, Toshiba Corporation
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IIJIMA Tomohiro
Advanced ULSI Process Engineering Department II, Process and Manufacturing Engineering Center, Semic
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ANZE Hirohito
Advanced ULSI Process Engineering Department II, Process and Manufacturing Engineering Center, Semic
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OOGI Susumu
Advanced ULSI Process Engineering Department II, Process and Manufacturing Engineering Center, Semic
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KAMIKUBO Takashi
Advanced ULSI Process Engineering Department II, Process and Manufacturing Engineering Center, Semic
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SHIMIZU Mitsuko
Advanced Research Laboratory, R&D Center, Toshiba Corporation
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ISHIMURA Takiji
Engineering Service Department, R&D Center, Toshiba Corporation
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TOJO Toru
EB Mask Equipment Engineering Department, Semiconductor Equipment Division, Toshiba Machine Corporat
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TAKIGAWA Tadahiro
Advanced Semiconductor Devices Research Laboratories, R&D Center, Toshiba Corporation
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Abe Takayuki
Institute Of Physics College Of General Education University Of Tokyo
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Tojo Toru
Advanced Research Laboratory R&d Center Toshiba Corporation
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Hattori Y
Tohoku Univ. Sendai Jpn
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Anze Hiroto
Advanced Ulsi Process Engineering Department Ii Process And Manufacturing Engineering Center Semicon
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Oogi Susumu
Advanced Ulsi Process Engineering Department Ii Process And Manufacturing Engineering Center Semicon
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Hattori Y
Advanced Research Laboratory R&d Center Toshiba Corporation
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Abe Takayuki
Institute Of Physics College Of Arts And Sciences University Of Tokyo:(present Office)nuflare Techno
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Iijima T
Advanced Ulsi Process Engineering Department Ii Process And Manufacturing Engineering Center Semicon
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Ishimura Takiji
Engineering Service Department R&d Center Toshiba Corporation
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Takigawa T
Semiconductor Components Operations Dai Nippon Printing Co. Ltd.
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Abe Takayuki
Advanced Semiconductor Devices Research Laboratories R&d Center Toshiba Corporation
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Oogi Susumu
Advanced Semiconductor Devices Research Laboratories R&d Center Toshiba Corporation
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Kamikubo Takashi
Advanced Semiconductor Devices Research Laboratories R&d Center Toshiba Corporation
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Abe Takayuki
Ulsi Research Labs. R&d Center Toshiba Corp.
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Abe Takayuki
Institute Of Physics College Of Arts And Sciences University Of Tokyo
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Abe Takayuki
Ulsi Research Center Toshiba Corporarion
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IIJIMA Tomohiro
Advanced Semiconductor Devices Research Laboratories, R&D Center, Toshiba Corporation
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Abe Takayuki
Advanced Semiconductor Devices Research Laboratories, R&D Center, Toshiba Corporation
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Shimizu Mitsuko
Advanced Research Laboratory, R&D Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-001, Japan
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Hattori Yoshiaki
Advanced Research Laboratory, R&D Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-001, Japan
関連論文
- MOCVD法により形成したPbTiO_3自己集合島の構造制御(新型不揮発性メモリー)
- 強誘電体ナノワイヤ及びナノアイランドの自発分極に関する研究 (平成21年度研究報告)
- ナノ強誘電体の基礎物性 : 現状と将来展望
- PbTiO_3- and Pb(Zr,Ti)O_3-Covered ZnO Nanorods
- MOCVD法によるPbTiO_3ナノ島作製とその強誘電性
- 24pYE-6 圧電応答顕微鏡でみる分域像(強誘電体分域の測定法の新展開と新しい分域像,シンポジウム,領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
- MOCVD法によるナノサイズ強誘電体の作製とその物性
- 強誘電体ナノ構造の作製とその物性
- 19aXC-4 HAADF STEM法を用いたSrTiO_3(100)/PbTiO_3強誘電体薄膜の原子構造組成解析(X線・粒子線(電子線),領域10,誘導体,格子欠陥,X線・粒子線,フォノン物性)
- 21pYN-2 強誘電体極薄膜及びナノ構造の作製とその物性(領域10シンポジウム : 強誘電体薄膜および界面における新しい現象とその応用,領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
- MOCVD法による強誘電体ナノ構造の形成とその物性(新型不揮発性メモリ)
- 29pXH-2 自己組織化による強誘電体PbTiO_3ナノ構造の形成と構造制御(領域10シンポジウム : ナノスケール構造を利用した物質創製-材料種の枠を超えて)(領域10)
- 圧電応答顕微鏡による強誘電体薄膜の観察と評価
- 21pXC-7 圧電応答顕微鏡による強誘電体薄膜の分極反転過程の観察と評価
- MOCVD法によるPb(Zr,Ti)O_3薄膜の低温成長と特性の改善(圧電デバイス・材料,強誘電体材料,有機エレクトロニクス,一般)
- MOCVD法によるPb(Zr,Ti)O_3極薄膜のエピタキシャル成長と電気的特性(物性,成膜,加工,プロセス : 強誘電体薄膜とデバイス応用)
- MOCVD法によるPb(Zr,Ti)0_3薄膜の低温成長と特性の改善(圧電デバイス・材料,強誘電体材料,有機エレクトロニクス,一般)
- I層にMgOを用いたMIS及びMFIS構造の作製とその評価
- High-Accuracy Proximity Effect Correction for Mask Writing
- Continuous Output Beam Steering in Vertical-Cavity Surface-Emitting Lasers with Two p-Type Electrodes by Controlling Injection Current Profile
- Multiferroism at Room Temperature in BiFeO_3/BiCrO_3(111) Artificial Superlattices
- Improvement of DC Characteristics in AlGaN/GaN Heterojunction Field-Effect Transistors Employing AlN Spacer Layer
- AIN/AlGaN/GaN Metal Insulator Semiconductor Heterostructure Field Effect Transistor
- Effects of High-k Passivation Films on AlGaN/GaN HEMT
- p-type InGaN Cap Layer for Normally-off Operation in AlGaN/GaN HFETs
- High Breakdown Voltage AlGaN/GaN MIS-HEMT with TiO_2/Si_3N_4 Gate Insulator
- High Speed AlGaN/GaN MIS-HEMT with High Drain and Gate Breakdown Voltages
- GaN Crystal Growth on Sapphire Substrate Using Islandlike GaN Buffer Formed by Repetition of Thin-Layer Low-Temperature Deposition and Annealing in rf-Plasma Molecular Beam Epitaxy
- Improvement of GaN Crystal Quality in RF-MBE Using Thin Low-Temperature-Grown GaN Buffer Layers
- Impact of Vicinal Sapphire (0001) Substrates on the High-Quality AIN Films by Plasma-Assisted Molecular Beam Epitaxy
- Gate-Length Dependence of DC Characteristics in Submicron-Gate AlGaN/GaN HEMTs
- Roles of Si Irradiation during the Growth Interruption on GaN Film Qualities in Plasma-Assisted Molecular Beam Epitaxy : Semiconductors
- Indium Roles on the GaN Surface Studied Directly by Reflection High-Energy Electron Diffraction Observations : Semiconductors
- High-Quality GaN Layers on c-Plane Sapphire Substrates by Plasma-Assisted Molecular-Beam Epitaxy Using Double-Step AlN Buffer Process
- Temperature Characteristics AlGaN/GaN Heterojunction Field Effect Transistors
- Advantages of AlN/GaN Metal Insulator Semiconductor Field Effect Transistor using Wet Chemical Etching With Hot Phosphoric Acid : Semiconductors
- Optimization of GaN Growth with Ga-Polarity by Referring to Surface Reconstruction Reflection High-Energy Electron Diffraction Patterns : Semiconductors
- High-Quality InGaN Films Grown on Ga-Polarity GaN by Plasma-Assisted Molecular-Beam Epitaxy
- AlGaN/GaN Heterojunction High Electron Mobility Transistors Using Ga-Polarity Crystal Growth by Plasma-Assisted Molecular Beam Epitaxy
- Use of Multiple Paris of Gain and Saturable Absorber Regions for Semiconductor Optical-Pulse Compressor
- Essential Change in Crystal Qualities of GaN Films by Controlling Lattice Polarity in Molecular Beam Epitaxy
- Effect of Leakage Current on Pulse-Width Characteristic in Q-Switched Two-Section AlGaAs Multiple-Quantum-Well Semiconductor Lasers
- Characteristics of Cavity Round-Trip Time Pulses in Short-Cavity Q-Switched AlGaAs Multiple-Quantum-Well Semiconductor Lasers
- Improvement of AlGaN/GaN Heterostructure Field Effect Transistor Characteristics by Using Two-Step Ohmic Contact Process
- Structural Properties of GaN Film with AIN Buffer Layers with Varying Growth Temperatures by Plasma-Assisted Molecular Beam Epitaxy
- GaInAs/GaAs Micro-Arc Ring Semiconductor Laser
- Microstructure and Electrical Properties of (Pb, La)(Zr. Ti)O_3 Films Crystallized from Amorphous State by TWO-Step Postdeposition Annealing
- Effects of Pt/SrRuO_3 Top Electrodes on Ferroelectric Properties of Epitaxial(Pb, La)(Zr, Ti)O_3 Thin Films
- Electrical Properties of LiNbO_3 Thin Films by RF Magnetron Sputtering and Bias Sputtering
- MOCVD法によるPb(Zr,Ti)0_3薄膜の低温成長と特性の改善(圧電デバイス・材料,強誘電体材料,有機エレクトロニクス,一般)
- MOCVD法によるPb(Zr,Ti)O_3薄膜の低温成長と特性の改善(圧電デバイス・材料,強誘電体材料,有機エレクトロニクス,一般)
- MOCVD法によるPb(Zr,Ti)O_3薄膜の低温成長と核付けが及ぼす効果
- Thermal Stability of SrRuO_3 Bottom Electrode and Electric Property of Pb(Zr, Ti)O_3 Thin Film Deposited on SrRuO_3
- 圧電応答顕微鏡による強誘電体Pb(Zr,Ti)O_3薄膜の分極反転過程の観察(半導体エレクトロニクス)
- DETECTION OF ACTIVE OXYGEN GENERATED FROM CERAMIC POWDERS HAVING ANTIBACTERIAL ACTIVITY
- Scalability of Gate/N^- Overlapped Lightly Doped Drain in Deep-Submicrometer Regime
- Subquarter-micrometer Dual Gate Complementary Metal Oxide Semiconductor Field Effect Transistor with Ultrathin Gate Oxide of 2 nm
- Deep Submicron Field Isolation with Buried Insulator between Polysilicon Electrodes (BIPS) (Special Section on High Speed and High Density Multi Functional LSI Memories)
- Effect of Strain in Epitaxially Grown SrRuO_3 Thin Films on Crystal Structure and Electric Properties
- High-Speed Convolution System for Real-Time Proximity Effect Correction
- Proximity Effect Correction For Electron Beam Lithography: Highly Accurate Correction Method
- Observations of Island Structures at the Initial Growth Stage of PbZr_xTi_O_3 Thin Films Prepared by Metalorganic Chemical Vapor Deposition
- High-Quality Growth of AlN Epitaxial Layer by Plasma-Assisted Molecular-Beam Epitaxy : Semiconductors
- EFFECT OF PARTICLE SIZE AND HEATING TEMPERATURE OF CERAMIC POWDERS ON ANTIBACTERIAL ACTIVITY OF THEIR SLURRIES
- EFFECT OF CERAMIC POWDER SLURRY ON SPORES OF BACILLUS SUBTILIS
- MUTAGENICITY TEST OF CERAMIC POWDER WHICH HAVE GROWTH INHIBITORY EFFECT ON BACTERIA
- INJURY OF Escherichia coli IN PHYSIOLOGICAL PHOSPHATE-BUFFERED SALINE INDUCED BY FAR-INFRARED IRRADIATION
- EVALUATION OF GROWTH INHIBITORY EFFECT OF CERAMICS POWDER SLURRY ON BACTERIA BY CONDUCTANCE METHOD
- Computer Simulation for Analysis of Lattice Polarity of Wurtzite GaN{0001} Film by Coaxial Impact Collision Ion Scattering Spectroscopy
- Terminating Structure of Plasma-Assisted Molecular Beam Epitaxial GaN{0001} Film Surface Identified by Coaxial Impact Collision Ion Scattering Spectroscopy
- Identification of Surface Atoms of LiGaO_2(001) Substrate for Hexagonal GaN Film by Coaxial Impact Collision Ion Scattering Spectroscopy
- Nuclear Relaxation Time of Solid ^3He : The Second and Fourth Moments of the Resonance Line(Condensed Matter Physics)
- Thermally Stimulated Current and Polarization Fatigue in Pb (Zr, Ti) O_3 Thin Films
- Intergration of Terraced Laser Diode and Garnet Crystals by Wafer Direct Bonding
- New Factorized S-Matrix and Its Application to Exactly Solvable q-State Model. II
- New Factorized S-Matrix and Its Application to Exactly Solvable q-State Model. I
- Pb(Zr, Ti)O_3薄膜を用いたMFIS構造における絶縁体膜の検討 : C-V 及び DLTS法による界面準位密度の測定
- Pb(Zr, Ti)O_3薄膜を用いたMFIS構造における絶縁体膜の検討 : C-V及びDLTS法による界面準位密度の測定
- MOCVD-Pb(Zr,Ti)O_3薄膜の電気的特性のグレインサイズ依存性
- MOCVD-Pb(Zr,Ti)O_3薄膜の電気的特性のグレインサイズ依存性
- Crystalline and Ferroelectric Properties of Pb(Zr, Ti)O_3 Thin Films Grown by Low-Temperature Metalorganic Chemical Vapor Deposition
- Epitaxial Growth and Ferroelectric Properties of the 20-nm-Thick Pb(Zr, Ti)O_3 Film on SrTiO_3(100) with an Atomically Flat Surface by Metalorganic Chemical Vapor Deposition
- Low-Temperature Fabrication of Ir/Pb(Zr,Ti)O_3/Ir Capacitors Solely by Metalorganic Chemical Vapor Deposition
- Influence of the Purity of Source Precursors on the Electrical Properties of Pb (Zr, Ti) O_3 Thin Films Prepared by Metalorganic Chemical Vapor Deposition
- Step Coverage Characteristics of Pb(Zr, Ti)O_3 Thin Films on Various Electrode Materials by Metalorganic Chemical Vapor Deposition
- プラズマCVD法によるZnO透明導電薄膜
- The Exchange Narrowing of T_1 in Solid Helium-3: The Fourth Moment of the Resonance Line
- Effects of Oxygen Concentration on Growth of Bi_4Ti_3O_ Thin Films by Metalorganic Chemical Vapor Deposition ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Dependence of Crystalline Structure and Lattice Parameters on Film Thickness in PbTiO_3/Pt/MgO Epitaxial Structure
- Thermal Effects in Properties of Photovoltaic Currents of Pb(Zr, Ti)O_3 Thin Films
- Analysis of GaInAsP Surfaces by Contact-Angle Measurement for Wafer Direct Bonding with Garnet Crystals
- Direct Bonding between Quaternary Compound Semiconductor and Garnet Crystals for Integrated Optical Isolator
- MOCVD法のよるPb(Zr,Ti)O_3(PZT)系薄膜の成長
- MOCVD法による強誘電体Pb(Zr, Ti)O_3薄膜の諸特性とメモリーデバイスへの応用
- Control of Orientation of Pb(Zr, Ti)O_3 Thin Films Using PbTiO_3 Buffer Layer ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Effects of O_3 on Growth and Electrical Properties of Pb(Zr, Ti)O_3 Thin Films by Photoenhanced Metalorganic Chemical Vapor Deposition ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Structural Properties of GaN Films with AlN Buffer Layers with Varying Growth Temperatures by Plasma-Assisted Molecular Beam Epitaxy
- Impact of Vicinal Sapphire (0001) Substrates on the High-Quality AlN Films by Plasma-Assisted Molecular Beam Epitaxy
- High Breakdown Voltage AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistor with TiO2/SiN Gate Insulator
- Generation of Cubic Phase in Molecular-Beam-Epitaxy-Grown Hexagonal InGaN Epilayers on InN