Impact of Vicinal Sapphire (0001) Substrates on the High-Quality AlN Films by Plasma-Assisted Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
AlN films grown by plasma-assisted molecular beam epitaxy on vicinal sapphire (0001) substrates were investigated. High structural and optical qualities were confirmed by high-resolution X-ray diffraction and 77 K cathodoluminescence measurements. It was found that changing the vicinal angles of sapphire substrates can easily control the surface morphologies of AlN films. Spiral-growth features were greatly suppressed. Furthermore, well-ordered straight monatomic-layer steps and multi-atomic-layer macro-steps were clearly observed by atomic force microscopy. Surface diffusion and step incorporation kinetics during the growth are the key-factors in determining the surface morphologies.
- Japan Society of Applied Physicsの論文
- 2003-11-01
著者
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Shimizu Mitsuaki
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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Shen Xu-qiang
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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Okumura Hajime
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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Okumura Hajime
Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Shen Xu-Qiang
Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Shimizu Mitsuaki
Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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