Growth of Droplet-Free AlGaN Buffer Layer with +c Polarity by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-03-15
著者
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OKUMURA Hajime
Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology
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SHEN Xu-Qiang
Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology
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Okumura H
National Institute Of Advanced Industrial Science And Technology Power Electronics Research Center
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Okumura H
Neutron Scattering Laboratory Issp The University Of Tokyo
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Shen Xu-qiang
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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TAKIGAWA Shinichi
R&D Association of Future Electron Devices, c/o National Institute of Advanced Industrial Science an
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FURUTA Kei
R&D Association of Future Electron Devices, c/o National Institute of Advanced Industrial Science an
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SHIMIZU Saburo
R&D Association of Future Electron Devices, c/o National Institute of Advanced Industrial Science an
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KITAMURA Toshio
Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology
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Shen X‐q
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
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Shimizu S
R&d Association Of Future Electron Devices C/o National Institute Of Advanced Industrial Science
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