High breakdown voltage AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor with TiO2/SiN gate insulator (Special issue: Solid state devices and materials)
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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YAGI Shuichi
National Institute of Advanced Industrial Science and Technology
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Okumura H
National Institute Of Advanced Industrial Science And Technology Power Electronics Research Center
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Okumura H
Neutron Scattering Laboratory Issp The University Of Tokyo
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Shimizu M
Tokyo Univ. Agriculture & Technol. Koganei
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