GaN Crystal Growth on Sapphire Substrate Using Islandlike GaN Buffer Formed by Repetition of Thin-Layer Low-Temperature Deposition and Annealing in rf-Plasma Molecular Beam Epitaxy
スポンサーリンク
概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2004-12-01
著者
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Shimizu Masahiro
Ulsi Development Center Mitsubishi Electric Corporation
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Shimizu M
Advanced Industrial Science And Technology (aist) Power Electronics Research Center
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Mitsugi Satoshi
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Shimizu Mitsuaki
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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PIAO Guanxi
National Institute of Advanced Industrial Science and Technology
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HIRATA Yoshitaka
Department of Science and Technology, Graduated School of Meiji University
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PIAO Guanxi
Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology
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OKUMURA Hajime
Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology
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Okumura H
National Institute Of Advanced Industrial Science And Technology Power Electronics Research Center
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Okumura H
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
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Okumura H
Neutron Scattering Laboratory Issp The University Of Tokyo
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Shimizu M
Tokyo Univ. Agriculture & Technol. Koganei
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Hirata Yoshitaka
Department Of Science And Technology Graduated School Of Meiji University
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Okumura Hajime
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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