GaN Crystal Growth on Sapphire Substrate Using Islandlike GaN Buffer Formed by Repetition of Thin-Layer Low-Temperature Deposition and Annealing in rf-Plasma Molecular Beam Epitaxy

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2004-12-01

著者

• Shimizu Masahiro

  Ulsi Development Center Mitsubishi Electric Corporation

• Shimizu M

  Advanced Industrial Science And Technology (aist) Power Electronics Research Center

• Mitsugi Satoshi

  Precision And Intelligence Laboratory Tokyo Institute Of Technology

• Shimizu Mitsuaki

  Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology

• PIAO Guanxi

  National Institute of Advanced Industrial Science and Technology

• HIRATA Yoshitaka

  Department of Science and Technology, Graduated School of Meiji University

• PIAO Guanxi

  Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology

• OKUMURA Hajime

  Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology

• Okumura H

  National Institute Of Advanced Industrial Science And Technology Power Electronics Research Center

• Okumura H

  National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn

• Okumura H

  Neutron Scattering Laboratory Issp The University Of Tokyo

• Shimizu M

  Tokyo Univ. Agriculture & Technol. Koganei

• Hirata Yoshitaka

  Department Of Science And Technology Graduated School Of Meiji University

• Okumura Hajime

  Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology

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