Control of Orientation of Pb(Zr, Ti)O_3 Thin Films Using PbTiO_3 Buffer Layer (<Special Issue> FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
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概要
- 論文の詳細を見る
The orientation of Pb(Zr, Ti)O_3 (PZT) thin films grown by metalorganic chemical vapor deposition (MOCVD) using a two-step growth process was controlled by changing the orientation of the PbTiO_3 buffer layer. The (111)-oriented and (100)-oriented PZT films were grown on the (111)-oriented and the (001) and (100) mixed-oriented PbTiO_3 buffer layers, respectively. From the atomic force microscope (AFM) observations, it was found that in the initial growth stages of the (111)-oriented PbTiO_3 layer, the main growth mechanism was two-dimensional growth. In the two-step growth process, the PbTiO_3 buffer layer played the important role of providing dense nuclei in the succeeding growth of rhombohedral PZT thin films. The influence of the thickness of a buffer layer on the relative dielectric constants of PZT films was also investigated.
- 社団法人応用物理学会の論文
- 1994-09-30
著者
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Shimizu M
Advanced Industrial Science And Technology (aist) Power Electronics Research Center
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Fujisawa Hironori
Department Of Electrical Electronic And Computer Engineering Graduate School Of Engineering Hitneji
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Shiosaki Tadashi
Research Development Division Sakai Chemical Industry Co. Ltd.
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Shiosaki Tadashi
Department Of Electrical Engineering Ii Faculty Of Engineering Kyoto University
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SUGIYAMA Masataka
Department of Electronics, Faculty of Engineering, Kyoto University
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Shimizu Masaru
Department Of Chemical Engineering Faculty Of Engineering Tokyo University Of Agriculture And Techno
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