Effects of O_3 on Growth and Electrical Properties of Pb(Zr, Ti)O_3 Thin Films by Photoenhanced Metalorganic Chemical Vapor Deposition (<Special Issue> FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
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概要
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Effects of O_3 on the growth and electrical properties of Pb(Zr, Ti)O_3 (PZT) thin films grown by photoenhanced metalorganic chemical vapor deposition (MOCVD) were investigated. Ferroelectric PZT films were obtained by both MOCVD and photoenhanced MOCVD using O_3 at substrate temperatures ranging from 560℃ to 625℃. The crystalline orientation, growth rate and growth temperature were not appreciably influenced by the use of O_3 and photoirradiation. However, in the leakage current characteristics, an improvement in breakdown voltage by the use of O_3 and photoirradiation was observed. From scanning electron microscope (SEM) observations, it was found that this improvement may be caused by the microscopic change in film structure.
- 社団法人応用物理学会の論文
- 1994-09-30
著者
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Shimizu M
Advanced Industrial Science And Technology (aist) Power Electronics Research Center
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Fujisawa Hironori
Department Of Electrical Electronic And Computer Engineering Graduate School Of Engineering Hitneji
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Shiosaki Tadashi
Research Development Division Sakai Chemical Industry Co. Ltd.
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Shiosaki Tadashi
Department Of Electrical Engineering Ii Faculty Of Engineering Kyoto University
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SUGIYAMA Masataka
Department of Electronics, Faculty of Engineering, Kyoto University
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Shimizu Masaru
Department Of Chemical Engineering Faculty Of Engineering Tokyo University Of Agriculture And Techno
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