21pYN-2 強誘電体極薄膜及びナノ構造の作製とその物性(領域10シンポジウム : 強誘電体薄膜および界面における新しい現象とその応用,領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
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概要
- 論文の詳細を見る
- 社団法人日本物理学会の論文
- 2005-08-19
著者
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Shimizu Masahiro
Ulsi Development Center Mitsubishi Electric Corporation
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清水 勝
兵庫県立大学大学院 工学研究科
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Shimizu M
Advanced Industrial Science And Technology (aist) Power Electronics Research Center
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Mitsugi Satoshi
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Shimizu Mitsuaki
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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Shimizu M
Tokyo Inst. Technology Yokohama
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Shimizu M
Tokyo Univ. Agriculture & Technol. Koganei
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