Structural Properties of GaN Film with AIN Buffer Layers with Varying Growth Temperatures by Plasma-Assisted Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-30
著者
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Shimizu Mitsuaki
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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OKUMURA Hajime
Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology
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JEGANATHAN Kulandaivel
Power Electronics Research Center, National institute of Advanced industrial Science and Technology,
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SHIM Byung-Rho
Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology
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OKITA Hideyuki
Department of Electrical Engineering, Science University of Tokyo
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Shimizu M
National Inst. Of Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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Okita Hideyuki
Department Of Electrical Engineering Science University Of Tokyo
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