Generation of Cubic Phase in Molecular-Beam-Epitaxy-Grown Hexagonal InGaN Epilayers on InN
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概要
- 論文の詳細を見る
We investigated the generation of a cubic phase in 200-nm-thick hexagonal InxGa(1-x)N epilayers with various InN molar fractions on N-polarity InN underlayers grown by rf plasma-assisted molecular beam epitaxy. For the case of InN molar fractions above 0.66, hexagonal InGaN layers were successfully grown without compositional phase separation or mixing of the cubic phase. On the other hand, for InN molar fractions below 0.66, the cubic phase was generated in the InGaN epilayers above a certain critical thickness. Generating the cubic phase is associated with degradation of the crystalline quality caused by a sharp change in InN molar fraction along the growth direction. The growth temperature window for obtaining pure hexagonal InGaN on InN without mixing of the cubic phase became narrower as the InN molar fraction decreased.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-01-15
著者
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Shimizu Mitsuaki
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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Shen Xu-qiang
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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SUGIYAMA Mutsumi
Department of Electrical Engineering, Science University of Tokyo
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Nakanishi Hisayuki
Department Of Electrical Engineering Faculty Of Science And Technology
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Kitamura Toshio
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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Okumura Hajime
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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Okumura Hajime
Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Shen Xu-Qiang
Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Sugiyama Mutsumi
Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
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Sugiyama Mutsumi
Department of Electrical, Electronics, and computer Engineering, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
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Kitamura Toshio
Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Shimizu Mitsuaki
Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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