Sulfurization Growth of SnS Films and Fabrication of CdS/SnS Heterojunction for Solar Cells
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概要
- 論文の詳細を見る
Polycrystalline tin sulfide (SnS) films were grown by sulfurization of a Sn precursor at low temperatures of 120–220 °C. The SnS film grown at 170 °C comprises densely packed 3–5-μm-diameter columnar grains, which is appropriate for use in the photoabsorption layers of solar cells. The SnS film had an optical bandgap of approximately 1.3 eV and p-type conductivity. Using an appropriate SnS film, an n-CdS/p-SnS heterojunction was fabricated on Mo-coated soda-lime glass substrates. These results are the first step toward realizing an optical device as a solar cell using a SnS film grown by sulfurization.
- 2008-12-25
著者
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Miyauchi Keisuke
Department Of Bioengineering Nagaoka University Of Technology
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SUGIYAMA Mutsumi
Department of Electrical Engineering, Science University of Tokyo
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Nakanishi Hisayuki
Department Of Electrical Engineering Faculty Of Science And Technology
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Minemura Takehiro
Department of Electrical Engineering, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
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Miyauchi Keisuke
Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Cniba 278-8510, Japan
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Sugiyama Mutsumi
Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
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Sugiyama Mutsumi
Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Cniba 278-8510, Japan
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Nakanishi Hisayuki
Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Cniba 278-8510, Japan
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Minemura Takehiro
Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Cniba 278-8510, Japan
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