Effect of Deposition Conditions on Photoluminescence of CuInSe2 Thin Films Prepared by Spin Coating Technique
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概要
- 論文の詳細を見る
CuInSe2 (CIS) thin films have been prepared under various growth conditions by two-step spin coating. Using Cu and In naphthenates as starting solution, precursors were grown then selenized using Se vapor. To identify intrinsic defect levels, the obtained CIS samples were characterized by photoluminescence (PL) spectroscopy at 15–100 K. Typical PL spectra of highly compensated semiconductors were observed between 0.85 and 1.05 eV. Defects responsible for the obtained PL spectra are discussed.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-11-25
著者
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Nakanishi Hisayuki
Department Of Electrical Engineering Faculty Of Science And Technology
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Ando Shizutoshi
Department Of Applied Physics Faculty Of Science Science University Of Tokyo
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Sugiyama Mutsumi
Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
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Nakanishi Hisayuki
Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
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Merdes Saoussen
Department of Electrical Engineering, Faculty of Engineering, Tokyo University of Science, 1-14-6 Kudankita, Chiyoda-ku, Tokyo 102-0073, Japan
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Kinoshita Atsuki
Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
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Hadjoub Zahia
Département de Physique, Faculté des Sciences, Université Badji-Mokhtar BP12, Annaba 23000, Algeria
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Hadjoub Zahia
Département de Physique, Faculté des Sciences, Université Badji-Mokhtar BP12, Annaba 23000, Algeria
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Ando Shizutoshi
Department of Electrical Engineering, Faculty of Engineering, Tokyo University of Science, 1-14-6 Kudankita, Chiyoda-ku, Tokyo 102-0073, Japan
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