Optical Absorption of Co-Doped Cd In_2 S_4
スポンサーリンク
概要
- 論文の詳細を見る
The absorption spectra of Co-doped Cd In. S. have bea?t measured at 4.2 K,90 K and 290 K. The observed spectra have beern interpreted on the assumptionthat doped Co tons are present as Co" and tetrahedrally coordinated.
- 社団法人日本物理学会の論文
- 1978-06-15
著者
-
NAKANISHI Hisayuki
Department of Electrical Engineering, Faculty of Science and Technology, Science University of Tokyo
-
IRIE Taizo
Department of Electrical Engineering, Faculty of Engineering, Science University of Tokyo
-
Irie Taizo
Department Of Applied Electronics Faculty Of Industrial Science And Technology Science University Of
-
Nakanishi Hisayuki
Department Of Electrical Engineering Faculty Of Science And Technology Science University Of Tokyo
-
Nakanishi Hisayuki
Department Of Electrical Engineering Faculty Of Science And Technology
-
UENO Masakazu
Department of Electrical Engineering,Faculty of Science and Technology,Science University of Tokyo
-
Ueno Masakazu
Department Of Electrical Engineering Faculty Of Science And Technology Science University Of Tokyo
関連論文
- X-ray Absorption Near Edge Structure (XANES) of CuInSe_2, Brass and Phosphor Bronze by Photoacoustic Method : Photoacoustic Spectroscopy
- Electrical and Optical Properties of CuInSe_2 Single Crystals Prepared by Three-Temperature-Horizontal Bridgman Method
- EXAFS Studies on (Cu, In)Se_2
- Comparison of Optical Properties of GaN/AlGaN and InGaN/AlGaN Single Quantum Wells
- Comparison of Optical Properties in GaN/AlGaN and InGaN/AlGaN Single Quantum Wells
- Experimental Determination of Valence Band Discontinuities : Semiconductors
- Electrical, Optical and Schottky Properties of AgGa(S_Se_x)_2 System
- Crystal Growth of CuInSe_2 by the Method of Horizontal Bridgman with Three Temperature Zones
- Structural and Optical Properties of the Cu_Ag_xGaS_2 System
- Effects of Oxygen Doping on Bulk Properties of CuInSe_2 Crystals
- Raman-Scattering Properties of I-III-VI_2 Group Chalcopyrite Semiconductors
- Thermodynamical Properties of I-III-Vl_2-Group Chalcopyrite Semiconductors
- Study on the Crystal Structure of CdInGaS_4 and Cd_3InGaS_6 by Computer Simulation Method
- Electrical and Optical Properties of the CuGa(S_Se_x)_2 System
- Photoluminescence and Photoconduction in the System (CdIn_2S_4)_-(In_2S_3)_x
- Green Emission in CdS Films Deposited on CdInGaS_4 by Evaporation Method
- Optical Properties of Zn_xCd_InGaS_4 System
- Photothermal Effect in Compound Semiconductors CdInGaS_4 and CdIn_2S_4
- Electrical and Optical Properties of CuInSe_2 Single Crystals with Various Deviations from Stoichiometry
- Hydrostatic Pressure Dependence of the Fundamental Absorption Edges of CdInGaS_4 and ZnIn_2S_4
- Study on the Crystallographic and Photoluminescent Properties of Cd_3InGaS_6. : II. Photoluminescence
- Study on the Crystallographic and Photoluminescent Properties of Cd_3InGaS_6. I. Crystallographic Study
- Green Emission in CdS/CdInGaS_4
- Fundamental Absorption Edge in CdIn_2S_4
- Optical Absorption of Co-Doped Cd In_2 S_4
- Optical Properties of Cd_3InGaS_6
- On Green Emission in CdInGaS_4
- Fundamental Optical Absorption in Crystals of the CdIn_2S_4-In_2S_3 System : CHALCOGENIDE SPINELS : OPTICAL, ELECTRICAL AND MAGNETIC PROPERTIES
- Optical Absorption in CdIn_2S_4
- Effect of Excess Sulphur on the Electrical and Optical Properties of CdIn_2S_4
- On the Electrical and Thermal Properties of the Ternary Chalcogenides A_2^IB^X_3, A^IB^VX_2 and A_3^IB^VX_4 (A^I=Cu; B^=Ge, Sn; B^V=Sb; X=S, Se, Te) : II. Electrical and Thermal Properties of Cu_3SbSe_4
- Negative Magnetoresistance Effect in CdIn_2S_4
- On the Electrical and Thermal Properties of the Ternary Chalcogenides A^I_2B^X_3, A^IB^VX_2 and A^I_3B^VX_4 (A^I=Cu; B^=Ge, Sn; B^V=Sb; X=S, Se, Te). : I. Thermoelectric Properties at Room Temperature
- Electrical and Magnetic Properties of Cu_2FeSnSe_4
- Preparation and Characterization of Electrodeposited CuInSe_2 Thin Films
- Electrical Properties of p- and n-Type CuInSe_2 Single Crystals
- Preparation and Photovoltaic Properties of CdIn_2S_4/CuInSe_2 Heterojunctions : CHALCOPYRITES : THIN FILMS AND JUNCTIONS
- Low-Frequency Photocurrent Oscillations in CdIn_2S_4 Single Crystals
- Preparation of SnS Films by Sulfurization of Sn Sheet
- Optical Properties of InGaAsP Multiple Quantum Well Edge-Emitting Light-Emitting Diode
- Sulfurization Growth of SnS Films and Fabrication of CdS/SnS Heterojunction for Solar Cells
- Optical and Electrical Properties of CuIn_5S_8 and AgIn_5S_8 Single Crystals
- Effect of Cr^ Ions on the Thermal Conductivity of CdIn_2S_4
- Electrical and Magnetic Properties of CdIn_ Cr_S_4
- On the Electrical and Thermal Properties of Ternary Chalcogenides A^I_2B^X_3, A^IB^VX_2 and A^I_3B^VX_4 (A^I=Cu; B^=Ge, Sn; B^V=Sb; X=S, Se, Te) : III. Electrical Properties of Cu_2GeSe_3
- Anisotropy of the Conduction Band in CdIn_2S_4
- Photoluminescence Property of ZnSnP2 by Solution Growth and Normal Freezing Methods
- Optical and Solar Cell Properties of Alpha-ray, Proton, and Gamma-ray Irradiated Cu(In,Ga)Se2 Thin Films and Solar Cells
- Chromium Concentration Dependence of Absorption and Photoluminescence Spectra in CdIn_2S_4:Cr
- Generation of Cubic Phase in Molecular-Beam-Epitaxy-Grown Hexagonal InGaN Epilayers on InN
- Effect of Deposition Conditions on Photoluminescence of CuInSe2 Thin Films Prepared by Spin Coating Technique