Optical Properties of InGaAsP Multiple Quantum Well Edge-Emitting Light-Emitting Diode
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概要
- 論文の詳細を見る
Effects of the number of wells on the characteristics of a 1.3-μm edge-emitting light-emitting diode (LED) are investigated. The edge-emitting LED with 1O quantum welts had the highest optical output power at 100 mA andthe lowest temperature coefficient of the optical output power in the temperature range from 10 to 75℃. The experimental result shows that the multiple quantum well structure improves the thermal stability of the optical output power.
- 社団法人応用物理学会の論文
- 1994-12-15
著者
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Irie Taizo
Department Of Applied Electronics Faculty Of Industrial Science And Technology Science University Of
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Kanie Hisashi
Department Of Applied Electronics Faculty Of Industrial Science And Technology Science University Of
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KASHIMA Yasumasa
Optical Device Division, OKI Electric Industry Co., Ltd.,
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MATOBA Akio
Optical Device Division, OKI Electric Industry Co., Ltd.,
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TAKANO Hiroshi
Optical Device Division, OKI Electric Industry Co., Ltd.,
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Matoba Akio
Optical Device Division Oki Electric Industry Co. Ltd.
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Kashima Yasumasa
Optical Device Division Oki Electric Industry Co. Ltd.
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Takano Hiroshi
Optical Device Division Oki Electric Industry Co. Ltd.
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