EXAFS Studies on (Cu, In)Se_2
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-12-30
著者
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NAKANISHI Hisayuki
Faculty of Science and Technology, Science University of Tokyo
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Oizumi H
Electrotechnical Laboratory
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Oyanagi Hiroyuki
Electrotechnical Laboratory
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Kuwahara Yuji
Department Of Material And Life Science Faculty Of Engineering Osaka University
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Kuwahara Yuji
The Institute Of Physical And Chemical Research
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Yamaguchi Hirotaka
Electrotechnical Laboratory
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OYANAGI Hiroyuki
National Institute for Advanced Industrial Science and Technology
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Oyanagi Hiroyuki
Optoelectronics Division Electrotechnical Laboratory
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IRIE Taizo
Department of Electrical Engineering, Faculty of Engineering, Science University of Tokyo
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Irie Taizo
Department Of Applied Electronics Faculty Of Industrial Science And Technology Science University Of
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Irie Taizo
Department Of Applied Electronics Tokyo University Of Science
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Yamaguchi H
Matsushita Electric Industrial Co. Ltd. Osaka Jpn
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Yamaguchi H
Ntt Basic Research Laboratories
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Oyanagi H
Optoelectronics Division Electrotechnical Laboratory
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Oyanagi Hiroyuki
Electrotech. Lab. Tsukuba
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Nakanishi Hisayuki
Faculty Of Science And Technology Tokyo University Of Science
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Nakanishi Hisayuki
Faculty Of Science And Engineering Science University Of Tokyo
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Yamaguchi Hirotaka
Electrotech. Lab. Tsukuba
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YAMAGUCHI Hirotaka
Electrotech. Lab. , Tsukuba
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OYANAGI Hiroyuki
Electrotech. Lab. , Tsukuba
関連論文
- Effect of Fermi Level Motion on the Optical, ESR and Transport Properties of CuInSe_2
- Force Microscopy Study of SrTiO_3(001) Surfaces with Single Atomic-Layer Steps
- Translational Phase Domains in the Cation Sublattice of Chalcopyrite Compounds
- X-ray Absorption Near Edge Structure (XANES) of CuInSe_2, Brass and Phosphor Bronze by Photoacoustic Method : Photoacoustic Spectroscopy
- Electron Probe Microanalysis of Second Phases via Acceleration Voltage Dependence
- Low Temperature Recovery of Ru(Ba, Sr)TiO_3/Ru Capacitors Degraded by Forming Gas Annealing
- Pressure-Induced Amorphization of CuGeO_3
- High-Resolution XANES Study of Molecular Structure of the Manganese Clusters in S_1 and S_2 States in Photosynthetic O_2-Evolving Complex
- Effect of Reduction on Superconductivity and Electronic State of Nd-Ce-Cu-O System
- X-Ray Absorption Near-Edge Studies of La_Sr_xCuO_
- Mossbauer and Magnetization Study of YBa_2(Cu_Fe_x)_3O_
- Polarized X-Ray Absorption Fine Structure of La_2CuO_Single Crystal
- X-Ray Absorption Fine Structure Studies of Fe-Doped Ba_2YCu_3O_y
- Si/Ge/Si Monolayer Heterostructure on Si(100) Studied by Surface-Sensitive EXAFS
- Superconductivity, Structure and Oxygen Count of Fe-Doped Ba_2YCu_3O_y : Electrical Properties of Condensed Matter
- Evidence of Critical Oxygen Concentration at y=6.7〜6.8 for 90 K Superconductivity in Ba_2YCu_3O_y
- Valence Study of Orthorhombic and Tetragonal Ba_2YCu_3O_y : The Role of Oxygen Vacancies in High-T_c Superconductivity
- Local Structure in Orthorhombie and Tetragonal Ba_2YCu_3O_ : The Role of Oxygen Vacancies for High T_c Superconductivity
- Short Range Order in High T_c Superconductors Ba_xY_CuO_ and Sr_xLa_CuO_
- Valence and Coordination of Cu Ions in High T_c Superconductor Ba_xY_CuO_
- X-Ray Absorption Spectra of High T_c Superconducting Sr_xLa_CuO_
- Short-Range Order Full Multiple Scattering Approach to the Polarized K-Edge XANES of Br Doped in Trans-Polyacetylene
- Short-Range Order Full Multiple Scattering Approach to the Polarized L_1-Edge XANES of Iodine Doped in Trans-Polyacetylene
- Fluorescence-Detected X-Ray Absorption Spectroscopy Applied to Structural Characterization of Very Thin Films;Ion-Beam-Induced Modification of Thin Ni Layers on Si(100)
- Polarized X-Ray Absorption Spectra of Bromine-Doped Polyacetylene;Evidence for Highly-Oriented Polybromine Ions
- Strain Effects on Interdiffusion in InAs_P_x/InP Heterostructures
- Electroreflectamce of CuInSe_2 Single Crystals
- Visible and Ultraviolet Photoluminescence from Cu-III-VI_2 Chalcopyrite Semiconductors Grown by Metalorganic Vapor Phase Epitaxy
- Visible and Ultraviolet Photoluminescence from Cu-III-VI_2 Chalcopyrite Semiconductors Grown by Metalorganic Vapor Phase Epitaxy
- Study of Temperature Dependent Local Structure by Polarized Cu K-edge EXAFS Measurements on La_Sr_xCuO_4 (x = 0.105, 0.13, 0.20)
- Study of Temperature Dependent Local Structure by Polarized Cu K-edge EXAFS Measurements on La_Sr_xCuO_4 (x=0.105, 0.13, 0.20)
- X-Ray Diffraction Study on Single Crystal of La_Ba_CuO_4
- Evidence for Critical Lattice Fluctuations in the High T_c Cuprates
- Electrical and Optical Properties of CuInSe_2 Single Crystals Prepared by Three-Temperature-Horizontal Bridgman Method
- Grazing Incidence X-Ray Diffraction Study of Arachidic Acid Monolayer on Cyanine Dye Aqueous Solution
- Bond Length Relaxation in Ultrathin InAs and InP_As_ Layers on InP(001)
- Local Structure of CuInSe_2 Thin Film Studied by EXAFS
- EXAFS Studies on (Cu, In)Se_2
- Site-Selective X-Ray Absorption Fine Structure (XAFS) Spectroscopy. (1) Design of Fluorescence Spectrometer and Emission Spectra
- Study of the Si(111) "5 × 5"-Cu Surface Structure by X-Ray Diffractionand Scanning Tunneling Microscopy : Surface, Interfaces, and Films
- Study of the Si(111)√×√-Sb Structure by X-Ray Diffraction
- The Isolated Se Chains in the Channels of Mordenite Crystal
- K-Edge XANES of GaP, InP and GaSb
- Application of Simple Mechanical Polishing to Fabrication of Nanogap Flat Electrodes
- Structural Study of Initial Growth of Nickel on Yttria-Stabilized Zirconia by Coaxial Impact-Collision Ion Scattering Spectroscopy
- Construction of Independently Driven Double-Tip Scanning Tunneling Microscope
- Structural Study of Metallic Growth on Yttria-Stabilized Zirconia Single Crystal by Coaxial Impact-Collision Ion Scattering Spectroscopy
- Structure of Atomically Smoothed LiNbO_3 (0001) Surface
- Scanning Tunneling Microscopy Observation of Langmuir-Blodgett Diacetylene Compound Films Deposited by Schaefer's Method (Short Note)
- Incorporation Process of the As Atom on the InP(001) Surface Studied by Extended X-Ray Absorption Fine Structure
- Electrical, Optical and Schottky Properties of AgGa(S_Se_x)_2 System
- Ge Epitaxial Overlayers on Si(001) Studied by Surface-Sensitive X-Ray Absorption Fine Structure: Evidence for Strain-Induced Surface Rearrangement
- Heterointerfaces in Strained-Layer Superlattices Studied by Surface-Sensitive XAFS
- Crystal Growth of CuInSe_2 by the Method of Horizontal Bridgman with Three Temperature Zones
- Structural and Optical Properties of the Cu_Ag_xGaS_2 System
- Effects of Oxygen Doping on Bulk Properties of CuInSe_2 Crystals
- Raman-Scattering Properties of I-III-VI_2 Group Chalcopyrite Semiconductors
- Thermodynamical Properties of I-III-Vl_2-Group Chalcopyrite Semiconductors
- Study on the Crystal Structure of CdInGaS_4 and Cd_3InGaS_6 by Computer Simulation Method
- Electrical and Optical Properties of the CuGa(S_Se_x)_2 System
- Photoluminescence and Photoconduction in the System (CdIn_2S_4)_-(In_2S_3)_x
- Modification of YBa_2Cu_3O_y Thin Films by Exposure to Argon Plasma and Ozone : A Structural Study
- STUDY OF THE FUNCTION OF C1- IN PHOTOSYNTHETIC OXYGEN EVOLUTION BY XRAY ABSORPTION SPECTROSCOPY
- Coverage Dependent Structure of Electrochemically Deposited Cu on p-GaAs(100) in H_2SO_4 Solution Determined by In Situ Surface X-Ray Absorption Fine Structure Spectra
- Green Emission in CdS Films Deposited on CdInGaS_4 by Evaporation Method
- Optical Properties of Zn_xCd_InGaS_4 System
- Photothermal Effect in Compound Semiconductors CdInGaS_4 and CdIn_2S_4
- Electrical and Optical Properties of CuInSe_2 Single Crystals with Various Deviations from Stoichiometry
- Hydrostatic Pressure Dependence of the Fundamental Absorption Edges of CdInGaS_4 and ZnIn_2S_4
- Study on the Crystallographic and Photoluminescent Properties of Cd_3InGaS_6. : II. Photoluminescence
- Study on the Crystallographic and Photoluminescent Properties of Cd_3InGaS_6. I. Crystallographic Study
- Green Emission in CdS/CdInGaS_4
- Optical Absorption of Co-Doped Cd In_2 S_4
- Raman spectra of CuGa_xIn_Se_2
- Optical Properties of Cd_3InGaS_6
- On Green Emission in CdInGaS_4
- Fundamental Optical Absorption in Crystals of the CdIn_2S_4-In_2S_3 System : CHALCOGENIDE SPINELS : OPTICAL, ELECTRICAL AND MAGNETIC PROPERTIES
- Optical Absorption in CdIn_2S_4
- Effect of Excess Sulphur on the Electrical and Optical Properties of CdIn_2S_4
- On the Electrical and Thermal Properties of the Ternary Chalcogenides A_2^IB^X_3, A^IB^VX_2 and A_3^IB^VX_4 (A^I=Cu; B^=Ge, Sn; B^V=Sb; X=S, Se, Te) : II. Electrical and Thermal Properties of Cu_3SbSe_4
- Superconducting Properties of Grain-Oriented Samples of Y_1Ba_2Cu_3O_y
- Temperature and Magnetic Field Dependence of the Critical Current in Polycrystalline Ba_2YCu_3O_y : Electrical Properties Condensed Matter
- Negative Magnetoresistance Effect in CdIn_2S_4
- On the Electrical and Thermal Properties of the Ternary Chalcogenides A^I_2B^X_3, A^IB^VX_2 and A^I_3B^VX_4 (A^I=Cu; B^=Ge, Sn; B^V=Sb; X=S, Se, Te). : I. Thermoelectric Properties at Room Temperature
- Site-Independent Adsorption of Hydrogen Atoms Deposited from a Scanning Tunneling Microscope Tip onto a Si(111)-7 × 7 Surface
- Electrical and Magnetic Properties of Cu_2FeSnSe_4
- Preparation and Characterization of Electrodeposited CuInSe_2 Thin Films
- Electrical Properties of p- and n-Type CuInSe_2 Single Crystals
- Preparation and Photovoltaic Properties of CdIn_2S_4/CuInSe_2 Heterojunctions : CHALCOPYRITES : THIN FILMS AND JUNCTIONS
- Low-Frequency Photocurrent Oscillations in CdIn_2S_4 Single Crystals
- Optical Properties of InGaAsP Multiple Quantum Well Edge-Emitting Light-Emitting Diode
- Optical and Electrical Properties of CuIn_5S_8 and AgIn_5S_8 Single Crystals
- Effect of Cr^ Ions on the Thermal Conductivity of CdIn_2S_4
- Electrical and Magnetic Properties of CdIn_ Cr_S_4
- On the Electrical and Thermal Properties of Ternary Chalcogenides A^I_2B^X_3, A^IB^VX_2 and A^I_3B^VX_4 (A^I=Cu; B^=Ge, Sn; B^V=Sb; X=S, Se, Te) : III. Electrical Properties of Cu_2GeSe_3
- Anisotropy of the Conduction Band in CdIn_2S_4
- Brillouin Scattering Study of CuGeO_3
- Copper Nanoclusters Electrochemically Deposited on p-GaAs(100) in H2SO4 Solution Probed by Surface-Sensitive XAFS
- Scanning Tunneling Microscopy Combined with Hard X-ray Microbeam of High Brilliance from Synchrotron Radiation Source
- Twenty-Five Millisecond Resolution Time-Resolved X-Ray Absorption Spectroscopy in Dispersive Mode