On the Electrical and Thermal Properties of the Ternary Chalcogenides A^I_2B^<IV>X_3, A^IB^VX_2 and A^I_3B^VX_4 (A^I=Cu; B^<IV>=Ge, Sn; B^V=Sb; X=S, Se, Te). : I. Thermoelectric Properties at Room Temperature

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Electrical conductivity, Seebeck coefficient, thermal conductivity and microhardness of ternary chalcogenides A_<2^I_>B^<IV>X_3, A^IB^VX_2 and A_<3^I>B^VX_4 (A^I=Cu; B^<IV=Ge, Sn; B^V=Sb; X=S, Se, Te) were measured and their thermoelectric figures of merit are evaluated at room temperature. All of the compounds have positive Seebeck coefficients. The lattice thermal conductivity increases linearly with the increase of the microhardness for A^IB^VX_2 and A_<3^I>B^VX_4s eries. The Keyes' relationship between lattice thermal conductivity and melting point are applicable for A^IB^VX_2 and A_<3^I>B^VX_4 series. On the other hand, the lattice thermal conductivity of A_<2^I>B^<IV>X_3 series does not satisfy the usual relationships mentioned above. Values of z_<max>, the value of the thermoelectric figure of merit at the optimized carrier concentration estimated by the formulas based on the simplified assumptions are in the order of 10^<-5> deg^<-1>., 10^<-4> deg^<-1>. and 10^<-3> deg^<-1>. for sulphides, selenides and tellurides, respectively. The value of z_<max> of Cu_3SbTe_4 is estimated to be 2.8×10^<-3> deg^<-1>.
社団法人応用物理学会の論文
1968-01-05