Electrical Properties of p- and n-Type CuInSe_2 Single Crystals
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概要
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The electrical resistivity and Hall effect of p- and n-type CuInSe_2 single crystals are measured in the temperature range from 80 K to 500 K.p- and n-type samples are prepared by doping with excess Se and excess In, respectively.The acceptor levels at 0.020 eV and 0.028 eV above the valence band and the donor levels at 0.012 eV and 0.18 eV below the conduction band are identified.The mobility data are analysed assuming scattering by acoustic, polar optical, and nonpolar optical phonons and by ionized impurities.For some of the n-type samples, the measurements are extended to liquid helium temperature and the result is analysed by the existing theories of impurity band conduction.
- 社団法人応用物理学会の論文
- 1979-07-05
著者
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ENDO Saburo
Department of Electrical Engineering, Faculty of Engineering, Science University of Tokyo
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IRIE Taizo
Department of Electrical Engineering, Faculty of Engineering, Science University of Tokyo
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Irie Taizo
Department Of Applied Electronics Faculty Of Industrial Science And Technology Science University Of
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Endo Saburo
Department Of Electrical Engineering Faculty Of Engineering Science University Of Tokyo
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Kimura Shigeo
Department Of Mechanical Systems Engineering Kanazawa University
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Kimura Shigeo
Department Of Electrical Engineering Faculty Of Engineering Science University Of Tokyo:(present Add
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Kimura Shigeo
Department Of Anesthesiology And Resucitology Ehime University School Of Medicine
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