Study of the Si(111) "5 × 5"-Cu Surface Structure by X-Ray Diffractionand Scanning Tunneling Microscopy : Surface, Interfaces, and Films
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2001-07-01
著者
-
TAKAHASHI Toshio
Institute for Solid State Physics, University of Tokyo
-
NAKATANI Shinichiro
Institute for Solid State Physics, University of Tokyo
-
Kuwahara Yuji
Department Of Material And Life Science Faculty Of Engineering Osaka University
-
Kuwahara Yuji
The Institute Of Physical And Chemical Research
-
Aono M
Nanoscale Quantum Conductor Array Project Icorp Japan Science And Technology Agency (jst)
-
Aono Masakazu
The Institute Of Physical And Chemical Research (riken)
-
Takahashi Teruo
Department Of Organic And Polymeric Materials Tokyo Institute Of Technology
-
Takahashi Tetsuo
National Institute Of Advanced Industrial Science And Technology Power Electronics Research Center
-
Taguchi Tomohiro
Department Of Organic Materials Tokyo Institute Of Technology
-
Takahashi Toshiaki
Department Of Environment And Mutation Research Institute For Radiation Biology And Medicine Hiroshi
-
Takahashi T
Nihon Univ. Kanagawa
-
Aono Masaharu
Dept. Of Electrical And Electronic Engineering Faculty Of Engineering Ehime University
-
Takahashi T
Japan Advanced Institute Of Science And Technology
-
Aono Masakazu
Department Of Precision Science And Technology Osaka University
-
KURAMOCHI Hiromi
Department of Precision Science & Technology, Faculty of Engineering, Osaka University
-
Takahashi T
Second Department Of Internal Medicine Hiroshima University School Of Medicine
-
Nakatani Shinichiro
Institute For Solid State Physics The University Of Tokyo
-
Kuramochi H
National Inst. Of Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
-
Takahashi Toshio
Institute For Solid State Physics The University Of Tokyo
-
Takahashi T
Department Of Pediatrics Akita University Graduate School Of Medicine
-
Takahashi Tsutomu
Department Of Energy Sciences The Graduate School At Nagatsuta Tokyo Institute Of Technology
-
Aono Masakazu
Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
-
Kuwahara Yuji
Department of Advanced Science and Biotechnology, Osaka University, Suita, Osaka 565-0871, Japan
関連論文
- 片側外部電極型キセノン放電管の放電進展に関する研究
- 片側外部電極型希ガス蛍光ランプの発光特性
- 片側外部電極型キセノン放電管の発光特性
- コンデンサバラスト点灯における冷陰極放電管の輝度低下現象
- Study on the Si(111) √×√ - Ag Surface Structure by X-Ray Diffraction : Surfaces, Interfaces and Films
- Atomic Diffusion and Electronic Structures of Ce/Ni(110)and Ce/Cu(110)Systems
- Characterization of amorphous-Si/1ML-Ge/Si(001) Interface Structure by X-ray Standing Waves
- Three-Dimensional Reconstruction of Atoms in Surface X-Ray Diffraction
- Force Microscopy Study of SrTiO_3(001) Surfaces with Single Atomic-Layer Steps
- Temporal VUV Emission Characteristics Related to Generations and Losses of Metastable Atoms in Xenon Pulsed Barrier Discharge(Regular Section)
- Pulsed Discharge Mercury-Free Xenon Fluorescent Lamps with Multi-Pairs of Electrodes
- Emission Characteristics of Xenon and Xenon-Rare Gas Dielectric Barrier Discharge Fluorescent Lamps
- E- to H-mode Transition in Inductively Coupled Xenon Discharge Lamp
- 赤外レーザ吸収分光によるキセノンパルスプラズマの計測
- Application of ICP in Developing Mercury-less Light Sources
- 無電極放電を利用した可変色光源
- 外部電極併用による複数電極無水銀蛍光ランプの高輝度・高効率化
- バリア放電を用いた無水銀光源の開発
- Ar-Hgの放電開始遅れに及ぼすレーザ照射の影響
- Radiation Characteristics of Discharge Lamps Filled with Xenon
- 15. 片側外部電極方式ランプの発光特性
- 水銀ランプへのレーザ照射位置と放電おくれの関係
- 10.2放電路キセノン放電管に関する研究((1)光源・回路・放電現象(I) : 電球・蛍光ランプ関係)
- 昇降圧チョッパ兼用形電子バラストの動作解析
- 高調波低減兼用形電子バラストの研究
- Xeバリア放電における共鳴線に関する研究
- High Sensitive Imaging of Atomic Arrangement of Ge Clusters Buried in a Si Crystal by X-ray Fluorescence Holography
- Structure Analysis of the CaF_2/Si(111) Interface in Its Initial Stage of Formation by Coaxial Impact-Collision Ion Scattering Spectroscopy (CAICISS)
- 内部電極と外部電極を併用した可変色蛍光ランプの試作
- 内部電極と外部電極を併用した可変色蛍光ランプの試作
- 32. パルス放電におけるキセノンの真空紫外放射特性((2)光源・回路・放電現象(II)(HIDランプ関係・その他))
- 11. 複電極対キセノン放電管に関する研究 : 3対の電極を有する放電管((1)光源・回路・放電現象(I)(電球・蛍光ランプ関係))
- 15. 外部電極形Xe放電管の放射特性に及ぼす電圧波形の影響((1)光源・回路・放電現象(I)(電球・蛍光ランプ関係))
- パルス放電におけるキセノン真空紫外放射の諸特性
- バリア放電を利用した外部・電極型無水銀蛍光ランプの基礎研究
- パルス点灯による内部電極型無水銀蛍光ランプの基礎研究
- 高圧水銀ランプの再点弧促進に関する研究
- 29. 高圧水銀ランプの再点弧時間のレーザ照射による短縮((2)光源・回路・放電現象〔II〕(HIDランプ関係)
- 1. Xe-Ne混合気体の放射のXe分圧比依存性((1)光源・回路・放電現象〔I〕)
- チョッパ兼用形高周波電子バラストの動作解析
- 兼用型高周波電子バラストの研究
- A New Experimental Geometry of Elastic Recoil Detection Analysis (ERDA)
- Three Distinct Terraces on a β-(ET)_2I_3 Surface Studied by Scanning Tunneling Microscopy
- Electronic and Magnetic States in Ferromagnets Observed by a Spin-Polarized Scanning Tunneling Microscope
- 蛍光ランプの発光色制御
- 6. パルス放電におけるHeの原子・分子放射((1)光源・回路・放電現象(I)(電球・蛍光ランプ関係))
- Dynamic charge of Cs atoms on GaAs(110)
- Si/1ML-Ge/Si(001) Interface Structure Characterized by Surface X-Ray Diffraction and X-Ray Standing-Wave Method
- Titanium Carbide Single-Crystal Tips for High-Resolution Scanning Tunneling Microscopy (STM)
- Kinetics of oxide cluster growth and decomposition on Si(111)
- Optical Parametric Amplification using the Phase Matching Retracing Behavior in MgO:LiNbO_3 for Generation of Intense Widely Tunable Mid-infrared Pulses
- Study on Sublattice Reversal in a GaAs/Ge/GaAs(001) Crystal by X-ray Standing Waves
- Single-Electron-Charging Effect Controlled by the Distance between a Substrate and a Liquid-Crystal Molecule
- Bond Length Relaxation in Ultrathin InAs and InP_As_ Layers on InP(001)
- Local Structure of CuInSe_2 Thin Film Studied by EXAFS
- EXAFS Studies on (Cu, In)Se_2
- New Method for Studying Surface and Interface Structures Using Kossel Lines
- Study of the Si(111) "5 × 5"-Cu Surface Structure by X-Ray Diffractionand Scanning Tunneling Microscopy : Surface, Interfaces, and Films
- Phase Shift of Neutrons in Magnetic Domains Observed by Interferometry
- Study of the Si(111)√×√-Sb Structure by X-Ray Diffraction
- Observation of Magnetic and Nuclear Phase Shifts of Neutrons by Interferometry
- 予備電離を用いたHIDランプの瞬時再点弧機構の基礎研究
- Application of Simple Mechanical Polishing to Fabrication of Nanogap Flat Electrodes
- Structural Study of Initial Growth of Nickel on Yttria-Stabilized Zirconia by Coaxial Impact-Collision Ion Scattering Spectroscopy
- Construction of Independently Driven Double-Tip Scanning Tunneling Microscope
- Structural Study of Metallic Growth on Yttria-Stabilized Zirconia Single Crystal by Coaxial Impact-Collision Ion Scattering Spectroscopy
- Structure of Atomically Smoothed LiNbO_3 (0001) Surface
- Scanning Tunneling Microscopy Observation of Langmuir-Blodgett Diacetylene Compound Films Deposited by Schaefer's Method (Short Note)
- A New Result with a Two Crystal Component Neutron Interferometer
- Neutron Bragg-Case Rocking Curves from the Front and Back Surfaces of a Silicon Crystal Plate
- Construction of Two Crystal Component Neutron Interferometer
- Incorporation Process of the As Atom on the InP(001) Surface Studied by Extended X-Ray Absorption Fine Structure
- パルス電圧印加による液晶パネル透過光の色制御
- 水銀-キセノンランプの発光に及ぼす温度の影響
- Surface Structure of InAs (001) Treated with (NH_4)_2S_x Solution
- Scanning Tunneling Microscope Study of a Local Electronic State Surrounding Mn Nanoclusters on Graphite
- Site-Independent Adsorption of Hydrogen Atoms Deposited from a Scanning Tunneling Microscope Tip onto a Si(111)-7 × 7 Surface
- The Absolute Coverage of K on the Si(111)-3×1-K Surface
- Variable-Color Fluorescent Lamps with Both Internal and External Electrodes
- 電磁力を用いた自己回転コロの研究
- Variable Color Discharge Lamps with Internal and External Electrodes
- 内部電極と外部電極を併用した可変色蛍光ランプの試作
- 137. LCDを用いた可変色光源システムに関する研究((8)光関連デバイス・ディスプレイ)
- VUV Radiation of Afterglow Generated by Pulsed Discharge of Xenon
- 環境保全型光源の開発動向
- 7. 点灯条件の違いによる蛍光ランプの発光色の変化((1)光源・回路・放電現象(I)(電球・蛍光ランプ関係))
- Fundamental Research on Mercuryless Fluorescent Lamps II : External Electrode Operation with Pulsed Dielectric Barrier Discharge
- Fundamental Research on Mercuryless Fluorescent Lamps I : Inner Electrode Operation with Pulsed Discharge
- Glow-to-Arc Transition of Mercury-Xenon-Neon Discharge with Cold Liquid Cathode
- レーザ生成プラズマによる火花放電誘発時の放電路と放電電流波形の相関性
- バリア放電の発光特性に及ぼす静電容量の影響
- Variation of the Yield of Electron Emission from Single Crystals with the Diffraction Condition of Exciting X-Rays : PHOTOEMISSION (MAINLY UPS AND XPS)
- Structural Correlation among Different Phases in the Initial Stage of Epitaxial Growth of Au on Si(111)
- Single Electron Tunneling Observed in a 2D Tunnel Junction Array at Room Temperature
- Tip-induced Electron Occupation of an Unoccupied Surfae State in Scanning Tunneling Microscopy Imaging of a GaAs(110) Surface with Ag Clusters
- Molecular Orbital Theory of Field Evaporation
- Variation of the Yield of Photoelectrons Emitted from a Silicon Single Crystal under the Asymmetric Diffraction Condition of X-Rays
- Effect on the Asymmetric Bragg-Case Diffraction of X-Rays on the Yield of X-Ray Photoelectrons from a Silicon Single Crystal
- 127. High brightness Property of Powder Electroluminescencent Device
- Scanning Tunneling Microscopy Combined with Hard X-ray Microbeam of High Brilliance from Synchrotron Radiation Source