Effect on the Asymmetric Bragg-Case Diffraction of X-Rays on the Yield of X-Ray Photoelectrons from a Silicon Single Crystal
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概要
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Angular variations in the yieljd of silicon A-photoelectrons are observed inprocess of two asymmetric Bragg-case diffractions of X-rays with the asymmetryfactors of 161 and IZ>l-'. The double-cr>'stal arransement of r>arallel settins isused for the 220 diffraction of silicon with Cu A(X radiation. Anomalies found inthe yield of photoelectrons show a remarkable difference between two cases. Theobserved curves agree fairly well with the calculated ones based on the dynamicaldiffraction theory.
- 社団法人日本物理学会の論文
- 1977-04-15
著者
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TAKAHASHI Toshio
Institute for Solid State Physics, University of Tokyo
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Kikuta Seishi
Institute For Solid State Physics University Of Tokyo
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Kikuta Seishi
Institute Of Industrial Science University Of Tokyo
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Takahashi Toshio
Institute For Solid State Physics The University Of Tokyo
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