Structural Investigation of Si(111) $\sqrt{3}\times \sqrt{3}$–In by Low-Energy Ion-Scattering Spectroscopy
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概要
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The atomic structure of Si(111) $\sqrt{3}\times\sqrt{3}$–In was investigated by low energy ion scattering spectroscopy with 1 keV He+ ions. Azimuthal angular distributions of scattered ions suggest that the In atoms are located in the three-fold sites on top of the second layer Si atoms. Comparing the experimental distribution as a function of the incident angle with the calculation using the Thomas-Fermi-Molière potential taking of the thermal vibrations, the Debye temperature of the surface In atoms and the bond length between the In atom and the first layer Si atom were estimated.
- 1989-10-20
著者
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IZUMI Koichi
Department of Applied Physics, Faculty of Engineering, University of Tokyo
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Kikuta Seishi
Department Of Applied Physics Faculty Of Engieering University Of Tokyo
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Takahashi Toshio
Institute For Solid State Physics The University Of Tokyo
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Izumi Koichi
Department of Applied Physics, Faculty of Engineering, University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113
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