Study on Sublattice Reversal in a GaAs/Ge/GaAs(001) Crystal by X-ray Standing Waves
スポンサーリンク
概要
- 論文の詳細を見る
Sublattice reversal of GaAs epitaxial layers in a GaAs/Ge/GaAs(001) crystal was investigated using X-ray standing waves. The crystal was fabricated so that the sublattices of GaAs epitaxial layers were spatially inverted to those of the GaAs(001) substrate with the help of Ge intermediate layers. To make sure of this spatial inversion, variation of GaK$\alpha$ and AsK$\alpha$ fluorescence yields was measured as a function of incident angle under $1\bar{1}5$ and $\bar{1}\bar{1}5$ Bragg conditions. The analysis showed that the angular variation of the measured fluorescence yields agrees well with that of theoretical calculations based on the spatial inversion.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-05-15
著者
-
HIRANO Keiichi
Institute of Material Structure Science, KEK-PF, High Energy Accelerator Research Organization
-
Kusano Shuji
Institute For Solid State Physics The University Of Tokyo
-
Ebihara Minoru
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
-
Koh Shinji
Department Of Applied Physics The University Of Tokyo
-
Nakatani Shinichiro
Institute For Solid State Physics The University Of Tokyo
-
Takahashi Toshio
Institute For Solid State Physics The University Of Tokyo
-
Ito Ryoichi
Department Of Applied Physics Faculty And Engineering University Of Tokyo
-
Kondo Takashi
Department Of Agricultural Chemistry The University Of Tokyo
-
Ebihara Minoru
Department of Applied Physics, Faculty of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyou-ku, Tokyo 113-8654, Japan
-
Koh Shinji
Department of Applied Physics, Faculty of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyou-ku, Tokyo 113-8654, Japan
-
Ito Ryoichi
Department of Physics, School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa 214-8571, Japan
-
Kusano Shuji
Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan
-
Hirano Keiichi
Institute of Materials Structure Science, High Energy Accelerator Research Organization, 1-1 Oho, Tsukuba, Ibaraki 305-0801, Japan
関連論文
- Study on the Si(111) √×√ - Ag Surface Structure by X-Ray Diffraction : Surfaces, Interfaces and Films
- X-ray Interference Fringe of Bragg-(Bragg)^m-Laue Case(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- In-phase and Anti-phase Interference Fringes in Rocking Curves of Resonant X-ray Dynamical Diffraction(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Magneto-photoluminescence Studies of AlInAs/AlGaAs Self-assembled Quantum Dots with Type-II Band Alignment (Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties)
- Observation of Band Alignment Transition from Type-I to Type-II in AlInAs/AlGaAs Self-assembled Quantum Dots
- Characterization of amorphous-Si/1ML-Ge/Si(001) Interface Structure by X-ray Standing Waves
- Enhancement of Strain Relaxation of SiGe Thin Layers by Pre-Ion-Implantation into Si Substrates
- Three-Dimensional Reconstruction of Atoms in Surface X-Ray Diffraction
- Optical Properties of Strain-Balanced Si_Ge_ Planar Microcavities on Si Substrates
- Fabrication of Periodically Domain-Inverted AlGaAs Quasi-Phase-Matched Devices by GaAs/Ge/GaAs Sublattice Reversal Epitaxy
- Sublattice Reversal in GaAs/Si/GaAs (100) Heterostructures by Molecular Beam Epitaxy
- Broad-Band Second-Harmonic Generation in LiNbO_3 Waveguide Using Optimized Domain-Inverted Grating
- Computer-Aided Design of Waveguide Gratings Having Asymmetric Reflectivity Spectra
- Design of Waveguide Grating Based on Simulated Annealing and Narrow-Band Modulation
- Site-Specific Studies on X-Ray Magnetic Circular Dichroism at Fe K Edge for Transition-Metal Ferrites
- Effect of Lattice Mismatch on the Solidus Compositions of Ga_xIn_P Liquid Phase Epitaxial Crystals
- Orientation Dependence of LPE Growth Behavior of Ga_xIn_P on (100) and (111)B GaAs Substrates
- Growth Mechanism in the Metalorganic Vapor Phase Epitaxy of Metastable GaP_N_x Alloys: A Growth Interruption Study
- Metalorganic Vapor Phase Epitaxy Growth of High Quality Cubic GaN on GaAs (100) Substrates
- High Quality Cubic GaN Growth on GaAs (100) Substrates by Metalorganic Vapor Phase Epitaxy
- Crystal Structure of GaN Grown on 3C-SiC Substrates by Metalorganic Vapor Phase Epitaxy
- Second-Harmonic Generation from GaP/AlP Multilayers on GaP(111)Substrates Based on Quasi-Phase Matching for the Fundamental Standing Wave
- New Semiconductor Second-Harmonic Generator Based on Quasi-Phase-Matching for Cavity-Enhanced Fundamental Standing Wave
- X-Ray Optics for Observing Dark-Field and Bright-Field Refraction-Contrast Images : Instrumentation, Measurement, and Fabrication Technology
- Fast Lateral Transport of Excitons in a GaAs/AlGaAs Quantum Well
- High-Temperature Metalorganic Vapor Phase Epitaxial Growth of GaAs/AlGaAs Quantum Structures in Tetrahedral-Shaped Recesses on GaAs (111) B Substrates
- Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire-Like Lasers
- GaAs/AlGaAs Quantum Structures Grown in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates by Metalorganic Vapor Phase Epitaxy
- Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire Lasers
- GaAs/AlGaAs Quantum Structures Grown in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates by MOVPE
- Metalorganic Vapor Phase Eitaxy Growth Features of AlGaAs in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates ( Quantum Dot Structures)
- Rectangular AlGaAs/AlAs Quantum Wires Using Spontaneous Vertical Quantum Wells
- The in Situ Growth of Lateral Confinement Enhanced Rectangular AlGaAs/AlAs Quantum Wires by Utilizing the Spontaneous Vertical Quantum Wells
- Photoreflectance Study of Interface Roughness in Ge/SiGe Strained-Layer Heterostructures
- Selective Growth of Cubic GaN in Small Areas on Patterned GaAs(100) Substrates by Metalorganic Vapor Phase Epitaxy
- Metal-Organic Vapor Phase Epitaxy Growth and Optical Study of GaAs/GaAs_P_x Strained-Barrier Single Quantum Well Structures
- Quantum Size Effect of Excitonic Band-Edge Luminescence in Strained Si_Ge_x/Si Single Quantum Well Structures Grown by Gas-Source Si Molecular Beam Epitaxy
- Si/1ML-Ge/Si(001) Interface Structure Characterized by Surface X-Ray Diffraction and X-Ray Standing-Wave Method
- Photoreflectance Study of GaAs/GaAsP Strained-Barrier Quantum Well Structures
- Study on Sublattice Reversal in a GaAs/Ge/GaAs(001) Crystal by X-ray Standing Waves
- New Method for Studying Surface and Interface Structures Using Kossel Lines
- GaAs/Ge/GaAs Sublattice Reversal Epitaxy on GaAs (100) and (111) Substrates for Nonlinear Optical Devices
- Study of the Si(111) "5 × 5"-Cu Surface Structure by X-Ray Diffractionand Scanning Tunneling Microscopy : Surface, Interfaces, and Films
- Phase Shift of Neutrons in Magnetic Domains Observed by Interferometry
- Study of the Si(111)√×√-Sb Structure by X-Ray Diffraction
- Observation of Magnetic and Nuclear Phase Shifts of Neutrons by Interferometry
- Extended X-Ray-Absorption Fine-Structure Beats : Application to III-V Semiconductors
- An Extended X-Ray-Absorption Fine-Structure Study of Bond Lengths in GaAs_P_x
- Self-Modulation of Light Output from Semiconductor Injection Lasers with Compound Cavities
- Self-Modulated Light Outputs from Pulsed Injection Lasers with Optical Feedback
- A New Result with a Two Crystal Component Neutron Interferometer
- Neutron Bragg-Case Rocking Curves from the Front and Back Surfaces of a Silicon Crystal Plate
- Construction of Two Crystal Component Neutron Interferometer
- Observation of Band Alignment Transition from Type-I to Type-II in AlInAs/AlGaAs Self-assembled Quantum Dots(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Liquid Phase Epitaxy of Miscible and Immiscible GaInPAs Alloys on (100)-Oriented GaP_xAs_ (x=0, 0.2, 0.4) Substrates
- Induction of Heparanase Gene Expression in Ventricular Myocardium of Rats with Isoproterenol-Induced Cardiac Hypertrophy(Pharmacology)
- Oscillator Strength of Excitons in InGaAs/GaAs Quantum Wells
- Nonlinear Optical Coefficient of AlAs Thin Film on GaAs Substrate
- Absolute Measurement of Second-Order Nonlinear Optical Coefficient of LiNbO_3 by Parametric Processes
- Lateral Far-Field Interference Pattern of Buried Heterostructure Lasers
- Steady Current Generation by RF Travelling Field in a Magnetized Toroidal Plasma
- Output Power Change Associated with Longitudinal Mode Jumping in Semiconductor Injection Lasers
- X-ray Angle-Resolved Computed Tomography Using an Asymmetric Analyzer Crystal
- Injection-Current-Controlled Bistable Optical Switching in Semiconductor Laser Amplifiers
- Thermodynamic Theory of III-V Semiconductor Ternary Solid Solutions
- Direct Phase Measurement of the X-Ray Specular Reflection Using Modulation under the Bragg Condition : Instrumentation, Measurement, and Fabrication Technology
- Fabrication of Periodic Waveguides Using Organic Crystals and Fluorinated Polyimides for Quasi-Phase-Matched Second-Harmonic Generation
- Variation of the Yield of Electron Emission from Single Crystals with the Diffraction Condition of Exciting X-Rays : PHOTOEMISSION (MAINLY UPS AND XPS)
- Detection of the Polarization Rotation of Reflected Light Using an Optical Feedback Effect in a Laser Diode : Waves, Optics and Quantum Electronics
- Polarization Control by Optical Feedback in Semiconductor Lasers : Waves, Optics and Quantum Electronics
- Theory of Optical Second-Harmonic Generation in Slab Waveguides with Dissipative Nonlinear Dielectric Cores
- Behavior of Miscibility Gaps in the Phase Diagrams of III-V Semiconductor Solid Solutions : Quaternary Systems of the Type A_xB_C_yD_
- Correction to "Thermodynamic Theory of III-V Semiconductor Ternary Solid Solutions"
- Theory of Optical Second-Harmonic Generation in Slab Waveguides
- Thermodynamic Theory of III-V Semiconductor Quaternary Solid Solutions
- New Fabrication Method of Channel Optical Waveguides of Organic Crystal Using an Inorganic Photoresist
- Optical Bistability in a Semiconductor Laser Amplifier
- Asymmetric Frequency Response of Semiconductor Laser Amplifiers
- Dispersion of the Linewidth Enhancement Factor in Semiconductor Injection Lasers
- Transient Temperature Variation of Injection Lasers
- Variation of the Yield of Photoelectrons Emitted from a Silicon Single Crystal under the Asymmetric Diffraction Condition of X-Rays
- Effect on the Asymmetric Bragg-Case Diffraction of X-Rays on the Yield of X-Ray Photoelectrons from a Silicon Single Crystal
- Development of an X-Ray Interferometer for High-Resolution Phase-Contrast X-Ray Imaging
- Homeostasis In Plasma Confinement At Beta Close To Unity
- Comparison Between Mechanical Relaxations Associated with Volume and shear Deformations in Styrene-Butadiene Rubber
- Well Width Dependence of the Exciton Phonon Interaction in Semiconductor Quantum Wells
- Multiple-Reflection Effects in Optical Second-Harmonic Generation : Waves, Optics and Quantum Electronics
- Dispersion of Second-Order Nonlinear Optical Coefficient d_ of 2-Methyl-4-Nitroaniline (MNA) : Waves, Optics and Quantum Electronics
- X-ray Interference Fringes from Weakly Bent Crystal
- Amplification of Reflected X-ray Beams by the Mirage Effect
- Application of an X-Ray Transmission Phase Plate to Measurements of X-Ray Magnetic Circular Dichroism
- Variation in the Yield of Photoelectrons Emitted from (111) and (1^^^-1^^^-1^^^-) Surfaces of a Gallium Phosphide Crystal with the Diffraction Condition of X-Rays
- Two-Beam X-ray Interferometer Using Diffraction in Multiple Bragg--Laue Mode
- X-ray Interference Fringes in Transmitted Beam of Bragg Mode from Very Weakly Bent Crystal
- Determination of Constant Strain Gradients of Elastically Bent Crystal Using X-ray Mirage Fringes
- Characterization of amorphous-Si/1ML-Ge/Si(001) Interface Structure by X-ray Standing Waves
- Three-Dimensional Reconstruction of Atoms in Surface X-Ray Diffraction
- Study on Sublattice Reversal in a GaAs/Ge/GaAs(001) Crystal by X-ray Standing Waves
- High Sensitive Imaging of Atomic Arrangement of Ge Clusters Buried in a Si Crystal by X-ray Fluorescence Holography
- Structural Investigation of Si(111) $\sqrt{3}\times \sqrt{3}$–In by Low-Energy Ion-Scattering Spectroscopy