Characterization of amorphous-Si/1ML-Ge/Si(001) Interface Structure by X-ray Standing Waves

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概要

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• The interface structure of an amorphous-Si/1ML-Ge/Si(001) crystal was investigated by the X-ray standing wave (XSW) method. The sample was prepared by the molocular beam epitaxy (MBE) deposition of 1ML of Ge on a clean Si(001) surface followed by the deposition of an amorphous Si (a-Si) capping layer of 50 Å thickness. The intensity of the reflected X-rays and the yield of the fluorescent X-rays of GeK$\alpha$ were measured around the 111 Bragg point. The fluorescence yield curve, which indicates the interaction between the XSW field and Ge atoms, showed that most of the Ge atoms stay at a position very close to the ideal Si site. This result provides effective feedback for fabricating SixGe1-x/Si devices.

• 2003-11-15

著者

• HIRANO Keiichi

  Institute of Material Structure Science, KEK-PF, High Energy Accelerator Research Organization

• Nojima Akinobu

  Institute For Solid State Physics University Of Tokyo

• Irisawa Toshifumi

  Department Of Applied Physics School Of Engineering The University Of Tokyo

• Sumitani Kazushi

  Institute For Solid State Physics The University Of Tokyo

• Koh Shinji

  Department Of Applied Physics The University Of Tokyo

• Shiraki Yasuhiro

  Department Of Applied Physics And Physico-informatics Keio University

• Nakatani Shinichiro

  Institute For Solid State Physics The University Of Tokyo

• Takahashi Toshio

  Institute For Solid State Physics The University Of Tokyo

• Koh Shinji

  Department of Applied Physics, School of Engineering, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan

• Nakatani Shinichiro

  Institute for Solid State Physics, The University of Tokyo, Kashiwanoha, Kashiwa, Chiba 277-8581, Japan

• Irisawa Toshifumi

  Department of Applied Physics, School of Engineering, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan

• Hirano Keiichi

  Institute of Materials Structure Science, High Energy Accelerator Research Organization, Oho-machi, Tsukuba, Ibaraki 305-0801, Japan

• Shiraki Yasuhiro

  Department of Applied Physics, School of Engineering, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan

• Nojima Akinobu

  Institute for Solid State Physics, The University of Tokyo, Kashiwanoha, Kashiwa, Chiba 277-8581, Japan

• Takahashi Toshio

  Institute for Solid State Physics, The University of Tokyo, Kashiwanoha, Kashiwa, Chiba 277-8581, Japan

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