High Sensitive Imaging of Atomic Arrangement of Ge Clusters Buried in a Si Crystal by X-ray Fluorescence Holography
スポンサーリンク
概要
- 論文の詳細を見る
- 2006-06-15
著者
-
YODA Yoshitaka
Japan Synchrotron Radiation Research Institute
-
USAMI Noritaka
Institute for Materials Research, Tokoku University
-
TAKAHASHI Toshio
Institute for Solid State Physics, University of Tokyo
-
NAKATANI Shinichiro
Institute for Solid State Physics, University of Tokyo
-
SHIRAKI Yasuhiro
Department of Applied Physics, The University of Tokyo
-
SUMITANI Kazushi
Institute for Solid State Physics, The University of Tokyo
-
Yoda Y
Crest Japan Science And Technology Agency:japan Synchrotron Radiation Research Institute
-
Yoda Yoshitaka
Japan Synchrotron Radiation Reserch Institute Sayou-gun
-
Yoda Yoshitaka
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
-
Usami Noritaka
Institute For Material Research Tohoku University
-
KUSANO Shuji
Institute for Solid State Physics, The University of Tokyo
-
Sumitani Kazushi
Institute For Solid State Physics The University Of Tokyo
-
Takahashi Tetsuo
National Institute Of Advanced Industrial Science And Technology Power Electronics Research Center
-
Takahashi T
Nihon Univ. Kanagawa
-
Takahashi T
Japan Advanced Institute Of Science And Technology
-
Yoda Y.
Crest Japan Science And Technology Agency
関連論文
- Development of ^Eu Time-Domain Interferometry and Its Application for the Study of Slow Dynamics in Ionic Liquids
- Mossbauer Spectroscopy of La_Ca_FePO and LaFeAsO_F_ under External Magnetic Field and Nuclear Resonant Inelastic Scattering of La_Ca_FePO(Condensed matter: electronic structure and electrical, magnetic, and optical prop
- Nuclear Resonant Scattering of Synchrotron Radiation by Yb Nuclides(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Observation of Softened Fe Modes in K-Doped BaFe_2As_2 via ^Fe Nuclear Resonant Inelastic Scattering
- A Possible Novel Magnetic Ordering in SmRu_4P_(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- A Possible Novel Magnetic Ordering in SmRu_4P_(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Nuclear Resonant Quasielastic Scattering from Fe Cations in Nafion Membranes : Effect of Dynamics in a Short Time Range : Condensed Matter: Structure, etc.
- Direct Observation of Low-Energy Sm Phonon in SmRu_4P_(Condensed matter: structure and mechanical and thermal properties)
- Epitaxial Growth and Polarity of ZnO Films on Sapphire (0001) Substrates by Low-Pressure Metal Organic Chemical Vapor Deposition
- In-Plane Orientation and Polarity of ZnO Epitaxial Films on As-Polished Sapphire (α-Al_2O_3) (0001) Substrates Grown by Metal Organic Chemical Vapor Deposition
- Study on the Si(111) √×√ - Ag Surface Structure by X-Ray Diffraction : Surfaces, Interfaces and Films
- Analysis of the Dark-Current Density in Solar Cells Based on Multicrystalline SiGe
- Floating Zone Growth of Si Bicrystals Using Seed Crystals with Artificially Designed Grain Boundary Configuration
- Magneto-photoluminescence Studies of AlInAs/AlGaAs Self-assembled Quantum Dots with Type-II Band Alignment (Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties)
- Observation of Band Alignment Transition from Type-I to Type-II in AlInAs/AlGaAs Self-assembled Quantum Dots
- Characterization of amorphous-Si/1ML-Ge/Si(001) Interface Structure by X-ray Standing Waves
- Enhancement of Strain Relaxation of SiGe Thin Layers by Pre-Ion-Implantation into Si Substrates
- Three-Dimensional Reconstruction of Atoms in Surface X-Ray Diffraction
- Optical Properties of Strain-Balanced Si_Ge_ Planar Microcavities on Si Substrates
- Interference of Nuclear Bragg Scattered X-Rays in X-Ray Interferometer with Large Optical Path Difference
- Time Domain Interferometry in X-Ray Region Using Nuclear Resonant Scattering
- Time-Delayed Interferometry with Nuclear Resonant Scattering of Synchrotron Radiation
- Flux Growth and Characterization of α-^Fe_2O_3 Single Crystals for Nuclear Bragg Scattering Optical Components
- High-Resolution Measurements of Nuclear Bragg Scattering from a Synthetic α-^Fe_2O_3 Crystal
- Observation of Nuclear Excitation of ^F by Synchrotron Radiation
- Preparation of a TiO-2 Film Coated Si Device for Photo-Decomposition of Water by CVD Method Using Ti(OPr^i)_4
- Functional Enhancement of Metal-Semiconductor-Metal (MSM) Infrared Photodetectors on Heteroepitaxial SiGe-on-Si Using the Anodic Oxidation/Passivation Method
- Structural and Optical Properties of ZnO Epitaxial Films Grown on Al_2O_3 (1120) Substrates by Metalorganic Chemical Vapor Deposition
- High Sensitive Imaging of Atomic Arrangement of Ge Clusters Buried in a Si Crystal by X-ray Fluorescence Holography
- High-Temperature Solution Growth and Characterization of Chromium Disilicide
- Experimental Study of the Influence of Magnetic Phase Transition on the Mossbauer Time Spectra of the Nuclear Forward Scattering
- Mossbauer Time Spectra of the Nuclear Forward Scattering from Coherently Vibrating Resonant Nuclei
- ^Eu Nuclear Resonant Inelastic Scattering of Eu_4As_3 around Charge Ordering Temperature (Condensed Matter: Structure, Mechanical and Thermal Properties)
- Temporal Mossbauer Absorber Thickness Effect Demonstrated Using Synchrotron Radiation
- Modification of Local Structure and Its Influence on Electrical Activity of Near (310) *5 Grain Boundary in Bulk Silicon
- Rectangular AlGaAs/AlAs Quantum Wires Using Spontaneous Vertical Quantum Wells
- The in Situ Growth of Lateral Confinement Enhanced Rectangular AlGaAs/AlAs Quantum Wires by Utilizing the Spontaneous Vertical Quantum Wells
- GaAsP Layers Grown on (111)-Oriented GaAs Substrates by Metalorganic Vapor Phase Epitaxy
- Introduction of Uniaxial Strain into Si/Ge Heterostructures by Selective Ion Implantation
- Development of Thin SiGe Relaxed Layers with High-Ge Composition by Ion Implantation Method and Application to Strained Ge Channels
- On Effects of Gate Bias on Hole Effective Mass and Mobility in Strained-Ge Channel Structures
- Thickness Dependence of Strain Field Distribution in SiGe Relaxed Buffer Layers
- Strain-Field Evaluation of Strain-Relaxed Thin SiGe Layers Fabricated by Ion Implantation Method
- Optical Detection of Interdiffusion in Strained Si_Ge_x/Si Quantum Well Structures
- Photoluminescence of Si_Ge_x/Si Quantum Welts with Abrupt Interfaces Formed by Segregant-Assisted Growth
- Band-Edge Photoluminescence of SiGe/Strained-Si/SiGe Type-II Quantum Wells on Si(100)
- Luminescence from Strained Si_Ge_x/Si Quantum Wells Grown by Si Molecular Beam Epitaxy
- Photogeneration and Transport of Carriers in Strained Si_Ge_x/Si Quantum Well Structures
- Quantum Size Effect of Excitonic Band-Edge Luminescence in Strained Si_Ge_x/Si Single Quantum Well Structures Grown by Gas-Source Si Molecular Beam Epitaxy
- Band-Edge Luminescence of Strained Si_xGe_/Si Single Quantum Well Structures Grown on Si(111) by Si Molecular Beam Epitaxy
- Electroluminescence from Strained SiGe/Si Quantum Well Structures Grown by Solid Source Si Molecular Beam Epitaxy
- Structural Origin of a Cluster of Bright Spots in Reverse Bias Electroluminescence Image of Solar Cells Based on Si Multicrystals
- Liquid Phase Epitaxial Growth of Si Layers on Si Thin Substrates from Si Pure Melts under Near-Equilibrium Conditions
- On the Origin of Improved Conversion Efficiency of Solar Cells Based on SiGe with Compositional Distribution
- Successful Growth of In_x Ga_As (x>0.18) Single Bulk Crystal Directly on GaAs Seed Crystal with Preferential Orientation
- Relationship between Device Performance and Grain Boundary Structural Configuration in a Solar Cell Based on Multicrystalline SiGe
- Evidence of the Presence of Built-in Strain in Multicrystalline SiGe with Large Compositional Distribution
- Control of Macroscopic Absorption Coefficient of Multicrystalline SiGe by Microscopic Compositional Distribution : Semiconductors
- Growth of Si_xGe_(x〓0.15) Bulk Crystal with Uniform Composition Utilizing in situ Monitoring of the Crystal-solution Interface
- In Situ Measurement of Composition in High-Temperature Solutions by X-Ray Fluorescence Spectrometry
- Fabrication of SiGe-on-Insulator through Thermal Diffusion of Ge on Si-on-Insulator Substrate
- High-Quality Crystalline Silicon Layer Grown by Liquid Phase Epitaxy Method at Low Growth Temperature
- Dynamics of Fe Cations in Nafion Membranes Studied by Nuclear Resonant Quasielastic Scattering of Synchrotron Radiation : Condensed Matter: Electronic Properties, etc.
- Nuclear Excitation of ^Fe Ions in Hydrochloric Acid Solution Using Synchrotron Radiation
- On the Controlling Mechanism of Preferential Orientation of Polycrystalline-Silicon Thin Films Grown by Aluminum-Induced Crystallization
- Toward high-efficiency thin-film solar cells using semiconducting BaSi_2(Session 1A : Emerging Device Technology 1)
- Toward high-efficiency thin-film solar cells using semiconducting BaSi_2(Session 1A : Emerging Device Technology 1)
- Photoresponse Properties of Polycrystalline BaSi_2 Films Grown on SiO_2 Substrates Using (111)-Oriented Si Layers by an Aluminum-Induced Crystallization Method
- Structural Disorder and Optical Property of InGaAsN Alloy Semiconductor (小特集テーマ 進展する窒化物半導体光・電子デバイスの現状,及び一般)
- Structural Disorder and Optical Property of InGaAsN Alloy Semiconductor (小特集テーマ:進展する窒化物半導体光・電子デバイスの現状,及び一般)
- Si/1ML-Ge/Si(001) Interface Structure Characterized by Surface X-Ray Diffraction and X-Ray Standing-Wave Method
- Nuclear Resonant Excitation of ^Dy and ^Eu by Synchrotron Radiation
- Study on Sublattice Reversal in a GaAs/Ge/GaAs(001) Crystal by X-ray Standing Waves
- New Method for Studying Surface and Interface Structures Using Kossel Lines
- Observation of Pronounced Effect of Compressive Strain on Room-Temperature Transport Properties of Two-Dimensional Hole Gas in a Strained Ge Quantum Well
- Study of the Si(111) "5 × 5"-Cu Surface Structure by X-Ray Diffractionand Scanning Tunneling Microscopy : Surface, Interfaces, and Films
- Phase Shift of Neutrons in Magnetic Domains Observed by Interferometry
- Study of the Si(111)√×√-Sb Structure by X-Ray Diffraction
- Observation of Magnetic and Nuclear Phase Shifts of Neutrons by Interferometry
- meV-Resolution Inelastic X-ray Scattering Using 37.133keV ^Sb Nuclear Resonance
- A New Result with a Two Crystal Component Neutron Interferometer
- Neutron Bragg-Case Rocking Curves from the Front and Back Surfaces of a Silicon Crystal Plate
- Construction of Two Crystal Component Neutron Interferometer
- Fabrication of n^+-BaSi_2/p^+-Si Tunnel Junction on Si(111) Surface by Molecular Beam Epitaxy for Photovoltaic Applications
- A Phase Retrieval Method for Noncrystalline Layers on Crystal Surfaces
- Mossbauer Spectroscopic Study of FeS under Pressure using Synchrotron Radiation : Condensed Matter: Electronic Properties, etc.
- High-Pressure Mossbauer Study of FeS with Nuclear Forward Scattering of Synchrotron Radiation (Proceedings of the Second International Conference on SRMS(Synchrotron Radiation in Materials Science)(2))
- Growth of Compositionally Graded SiGe Bulk Crystal and Its Application As Substrate with Lateral Variation in Ge Content
- The Γ_c-Γ_v Transition Energies of Al_xIn_P Alloys
- In situ Observation of Polycrystalline Silicon Thin Films Grown Using Aluminum-Doped Zinc Oxide on Glass Substrate by the Aluminum-Induced Crystallization
- Variation of the Yield of Electron Emission from Single Crystals with the Diffraction Condition of Exciting X-Rays : PHOTOEMISSION (MAINLY UPS AND XPS)
- Variation of the Yield of Photoelectrons Emitted from a Silicon Single Crystal under the Asymmetric Diffraction Condition of X-Rays
- Effect on the Asymmetric Bragg-Case Diffraction of X-Rays on the Yield of X-Ray Photoelectrons from a Silicon Single Crystal
- Acceptorlike Behavior of Defects in SiGe Alloys Grown by Molecular Beam Epitaxy
- Line Width Dependence of Anisotropic Strain State in SiGe Films Induced by Selective Ion Implantation
- Effect of Solid-Phase-Epitaxy Si Layers on Suppression of Sb Diffusion from Sb-Doped n-BaSi/p-Si Tunnel Junction to Undoped BaSi Overlayers (Special Issue : Solid State Devices and Materials (2))
- Effect of Phase Purity on Dislocation Density of Pressurized-Reactor Metalorganic Vapor Phase Epitaxy Grown InN (Special Issue : Solid State Devices and Materials (2))
- High-Temperature Solution Growth and Characterization of Chromium Disilicide
- Generation and Wavelength Control of Resonant Luminescence from Silicon Photonic Crystal Microcavities with Ge Dots
- Room-Temperature Electroluminescence from Ge Quantum Dots Embedded in Photonic Crystal Microcavities