Line Width Dependence of Anisotropic Strain State in SiGe Films Induced by Selective Ion Implantation
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概要
- 論文の詳細を見る
We investigated the line width dependence of anisotropic strain states in SiGe layers grown on selectively ion-implanted Si substrates with stripe patterns. It was found that strain relaxation of the SiGe layers on the unimplanted region occurred only along the stripe pattern and that the increase in the ion-implanted region provided larger anisotropy of the strain state. From the observation of one-directional surface steps, it was concluded that the uniaxially strained SiGe layer was formed by plastic deformation caused by selective misfit dislocation generation, which means that the anisotropic strain induced in the SiGe film is stable and good for device applications.
- Japan Society of Applied Physicsの論文
- 2011-09-25
著者
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NAKAGAWA Kiyokazu
Center for Crystal Science and Technology, University of Yamanashi
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Usami Noritaka
Institute For Material Research Tohoku University
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Sawano Kentarou
Research Center For Silicon Nano-science Advanced Research Laboratories Musashi Institute Of Technol
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Hoshi Yusuke
Research Center For Silicon Nano-science Advanced Research Laboratories Musashi Institute Of Technol
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Yamada Atsunori
Research Center For Silicon Nano-science Advanced Research Laboratories Musashi Institute Of Technol
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Arimoto Keisuke
Center For Crystal Science And Technology University Of Yamanashi
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Shiraki Yasuhiro
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo
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Nagakura So
Research Center for Silicon Nano-Science, Advanced Research Laboratories, Tokyo City University, Set
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Nagakura So
Research Center For Silicon Nano-science Advanced Research Laboratories Tokyo City University
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Nakagawa Kiyokazu
Center for Crystal Science and Technology, Faculty of Engineering, University of Yamanashi, Kofu 400-8511, Japan
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