Large-Grain Polycrystalline Silicon Films Formed through Flash-Lamp-Induced Explosive Crystallization
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概要
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The flash lamp annealing (FLA) of electron-beam- (EB-) evaporated amorphous silicon (a-Si) films results in the formation of polycrystalline Si (poly-Si) films with at least a few μm long grains stretching along lateral crystallization directions. Unlike the case of using chemical-vapor-deposited (CVD) hydrogenated a-Si films as precursors, no peeling of Si films occurs even in the absence of Cr adhesion layers. Such a flash-lamp-induced crystallization occurs also in doped EB-evaporated a-Si films as in the case of undoped films. The p+/p-/n+ stacked structure is sufficiently kept even after crystallization, although the profiles of dopants are slightly modified. This fact clearly indicates that the crystallization observed is not based on liquid-phase epitaxy (LPE) after the complete melting of the whole a-Si precursor during millisecond-order treatment but through LPE-based explosive crystallization (EC), self-catalytic lateral crystallization driven by the release of latent heat. The formation of poly-Si films with large grains and the sufficient preservation of dopant profiles would lead to the utilization of the poly-Si films formed for solar cell devices.
- 2012-10-25
著者
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Matsumura Hideki
Japan Advanced Inst. Sci. And Technol. (jaist) Ishikawa Jpn
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Ohdaira Keisuke
Japan Advanced Inst. Of Sci. And Technol. (jaist) Asahidai Nomi-shi Ishikawa-ken 923-1292 Jpn
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Usami Noritaka
Institute For Material Research Tohoku University
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Ohdaira Keisuke
Japan Advanced Institute of Science and Technology, Nomi, Ishikawa 923-1292, Japan
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Sawada Keisuke
Japan Advanced Institute of Science and Technology, Nomi, Ishikawa 923-1292, Japan
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Varlamov Sergey
University of New South Wales, Sydney, NSW 2052, Australia
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Matsumura Hideki
Japan Advanced Institute of Science and Technology, Nomi, Ishikawa 923-1292, Japan
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