Catalytic Chemical Sputtering: A Novel Method for Obtaining Large-Grain Polycrystalline Silicon : Surfaces, Interfaces, and Films

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2001-03-15

著者

• Matsumura Hideki

  Japan Advanced Inst. Sci. And Technol. (jaist) Ishikawa Jpn

• MASUDA Atsushi

  Japan Advanced Institute of Science and Technology

• IZUMI Akira

  Japan Advanced Institute of Science and Technology (JAIST)

• MASUDA Atsushi

  School of Materials Science, Japan Advanced Institute of Science and Technology

• MATSUMURA Hideki

  School of Materials Science, Japan Advanced Institute of Science and Technology

• IZUMI Akira

  School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST)

• KAMESAKI. Koji

  School of Materials Science, JAIST (Japan Advanced Institute of Science and Technology)

• Matsumura Hideki

  School Of Materials Science Japan Advanced Institute Of Science And Technology (jaist)

• Matsumura Hideki

  School Of Materials Science Jaist (japan Advanced Institute Of Science And Technology)

• Izumi A

  School Of Materials Science Japan Advanced Institute Of Science And Technology (jaist)

• Masuda A

  Japan Advanced Institute Of Science And Technology

• Kamesaki. Koji

  School Of Materials Science Jaist (japan Advanced Institute Of Science And Technology)

• Masuda Atsushi

  School Of Materials Science Japan Advanced Institute Of Science And Technology

• Matsumura Hideki

  School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST)

• Kamesaki Koji

  School of Materials Science, JAIST (Japan Advanced Institute of Science and Technology)

• Masuda Atsushi

  School of Material Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan

• Matsumura Hideki

  School of Material Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan

関連論文

• Theoretical Study for Drastic Improvement of Solar Cell Efficiency
• Catalytic CVD processes of oxidizing species and the prevention of　oxidization of heated tungsten filaments by H₂
• Air-Stable p-Type and n-Type Carbon Nanotube Field-Effect Transistors with Top-Gate Structure on SiN_x Passivation Films Formed by Catalytic Chemical Vapor Deposition
• Preparation of Low-Stress SiN_x Films by Catalytic Chemical Vapor Deposition at Low Temperatures
• Improvement of Deposition Rate by Sandblasting of Tungsten Wire in Catalytic Chemical Vapor Deposition
• Moisture-Resistive Properties of SiN_x Films Prepared by Catalytic Chemical Vapor Deposition below 100℃ for Flexible Organic Light-Emitting Diode Displays
• Quantification of Gas-Phase H-Atom Number Density by Tungsten Phosphate Glass
• Effect of Atomic Hydrogen on Preparation of Highly Moisture-Resistive SiN_x Films at Low Substrate Temperatures
• Highly Moisture-Resistive SiN_x Films Prepared by Catalytic Chemical Vapor Deposition
• Low-Resistivity Phosphorus-Doped Polycrystalline Silicon Thin Films Formed by Catalytic Chemical Vapor Deposition and Successive Rapid Thermal Annealing
• Catalytic Chemical Sputtering: A Novel Method for Obtaining Large-Grain Polycrystalline Silicon : Surfaces, Interfaces, and Films
• Control of Polycrystalline Silicon Structure by the Two-Step Deposition Method
• Annealing Effect of Pb(Zr, Ti)O_3 Ferroelectric Capacitor in Active Ammonia Gas Cracked by Catalytic Chemical Vapor Deposition System
• A Novel Nanoscale Metal Transistor Fabricated by Conventional Photolithography
• Role of Hydrogen in Polycrystalline Si by Excimer Laser Annealing
• Drastic Improvement of Minority Carrier Lifetimes Observed in Hydrogen-Passivated Flash-Lamp-Crystallized Polycrystalline Silicon Films
• Structural Analysis of Hydrogenated a-Si Films by Reverse Monte Carlo Simulation
• Optical Absorption Properties of Indium-Doped Thin Crystalline Silicon Films
• Dependency of Boron Doping Efficiency on Hydrogen Flow Rate in Hydro-Fluorinated Amorphous Silicon
• Properties of Hydro-Fluorinated Amorphous Silicon-Carbide Produced by Intermediate Species SiF_2
• The Staebler-Wronski Effect in Hydro-Fluorinated Amorphous Silicon Prepared Using the Intermediate Species SiF_2
• Photoconductive Amorphous Silicon-Carbide Produced by Intermediate Species SiF_2 and CF_4 Mixture
• An Amorphous-Silicon Film Usable at High-Temperature : Annealing Properties of a New Fluorinated Amorphous-Silicon : II-2: AMORPHOUS FILM PREPARATION AND CHARACTERIZATION (II)
• A Comparison of the Thermal Stabilities of Fluorinated and Hydrogenated Amorphous-Silicons
• Effect of Hydrogen on Secondary Grain Growth of Polycrystalline Silicon Films by Excimer Laser Annealing in Low-Temperature Process
• Electric Field Induced Reflection in GaInAsP/InP MQW Structure
• Electric Field-Induced Absorption in GaInAsP/InP MQW Structures Grown by LPE
• Effective Interaction for the Jastrow Model Wave Function with the Transcorrelated Method(Nuclear Physics)
• Correlation between O/Er Content Ratio and Photoluminescence Intensity of (Er, O)-Doped Hydrogenated Amorphous Si Thin Films Prepared by a Catalytic Chemical Vapor Deposition/Laser Ablation Hybrid Process
• Effects of High Nitrogen Pressure and Thermal Treatment on Adhesion to Amorphous Silicon/Silicon Nitride/Polyethersulfone Substrate during Excimer Laser Annealing
• Mechanism of Stoichiometric Deposition of Volatile Elements in Multimetal-Oxide Films Prepared by Pulsed Laser Ablation
• Hall Mobility of Low-Temperature-Deposited Polysilicon Films by Catalytic Chemical Vapor Deposition Method
• Theoretical Consideration of a New Nanometer Transistor Using Metal/Insulator Tunnel-Junction
• Nanometer Pattern-Mask Fabricated by Conventional Photolithography
• 10-nm-Size Fabrication of Semiconductor Substrates and Metal Thin Lines by Conventional Photolithography
• Microstructure of Polycrystalline Silicon Films Formed through Explosive Crystallization Induced by Flash Lamp Annealing
• Relationship between Electrical Conductivity and Charged-Dangling-Bond Density in Nitrogen- and Phosphorus-Doped Hydrogenated Amorphous Silicon
• Spectroscopic Study on N_O-Plasrma Oxidation of Hydrogenated Amorphous Silicon and Behavior of Nitrogen
• Radical Species Formed by the Catalytic Decomposition of NH3 on Heated W Surfaces
• Effects of High Nitrogen Pressure and Thermal Treatment on Adhesion to Amorphous Silicon/Silicon Nitride/Polyethersulfone Substrate during Excimer Laser Annealing
• Highty Oriented Pb(Zr, Ti)O_3 Thin Films Prepared by Pulsed Laser Ablation GaAs and Si Substrates with MgO Buffer Layer
• NH_3-Plasma-Nitridation Process of (100) GaAs Surface Observed by Angle-Dependent X-Ray Photoelectron Spectroscopy
• Study of Silicidation Process of Tungsten Catalyzer during Silicon Film Deposition in Catalytic Chemical Vapor Deposition
• Effects of Oxygen Gas Addition and Substrate Cooling on Preparation of Amorphous Carbon Nitride Films by Magnetron Sputtering
• Heteroepitaxial Growth of CdF_2 Layers on CaF_2/Si(111) by Molecular Beam Epitaxy
• CdF_2/CaF_2 Resonant Tunneling Diode Fabricated on Si(111)
• CdF_2/CaF_2 Resonant Tunneling Diode Fabricated on Si(111)
• Relationship between Photodarkening and Light-Induced ESR in Amorphous Ge-S Films Alloyed with Lead
• Coating techniques of metal chambers for remote catalytic chemical vapor deposition applications
• Selection of Material for the Back Electrodes of Thin-Film Solar Cells Using Polycrystalline Silicon Films Formed by Flash Lamp Annealing
• Formation of Several-Micrometer-Thick Polycrystalline Silicon Films on Soda Lime Glass by Flash Lamp Annealing
• Study on Stability of Amorphous Silicon Thin-Film Transistors Prepared by Catalytic Chemical Vapor Deposition
• Distribution of Phosphorus Atoms and Carrier Concentrations in Single-Crystal Silicon Doped by Catalytically Generated Phosphorous Radicals
• Formation of Highly Uniform Micrometer-Order-Thick Polycrystalline Silicon Films by Flash Lamp Annealing of Amorphous Silicon on Glass Substrate
• Improvement of Deposition Rate by Sandblasting of Tungsten Wire in Catalytic Chemical Vapor Deposition
• Effect of Radical-Doped n+ Back Surface Field Layers on the Effective Minority Carrier Lifetimes of Crystalline Silicon with Amorphous Silicon Passivation Layers Deposited by Catalytic Chemical Vapor Deposition
• Mass-Spectrometric Studies of Catalytic Chemical Vapor Deposition Processes of Organic Silicon Compounds Containing Nitrogen
• Large-Grain Polycrystalline Silicon Films Formed through Flash-Lamp-Induced Explosive Crystallization
• Low Temperature Phosphorus Doping in Silicon Using Catalytically Generated Radicals
• Grain Enlargement of Polycrystalline Silicon by Multipulse Excimer Laser Annealing: Role of Hydrogen
• Preparation of Low-Stress SiNx Films by Catalytic Chemical Vapor Deposition at Low Temperatures
• Correlation between O/Er Content Ratio and Photoluminescence Intensity of (Er, O)-Doped Hydrogenated Amorphous Si Thin Films Prepared by a Catalytic Chemical Vapor Deposition/Laser Ablation Hybrid Process
• Complementary Metal–Oxide–Semiconductor Ion-Sensitive Field-Effect Transistor Sensor Array with Silicon Nitride Film Formed by Catalytic Chemical Vapor Deposition as an Ion-Sensitive Membrane
• Novel Nano-Fabrication Technique with Low Edge Roughness
• High-Quality Polycrystalline Silicon Films with Minority Carrier Lifetimes over 5 μs Formed by Flash Lamp Annealing of Precursor Amorphous Silicon Films Prepared by Catalytic Chemical Vapor Deposition
• Quantification of Gas-Phase H-Atom Number Density by Tungsten Phosphate Glass
• Moisture-Resistive Properties of SiNx Films Prepared by Catalytic Chemical Vapor Deposition below 100°C for Flexible Organic Light-Emitting Diode Displays
• Relationship between Textured Structure of Substrates and Defect Density of Catalytic Chemical Vapor Deposition Amorphous Silicon Films
• Effective Interaction for the Jastrow Model Wave Function with the Transcorrelated Method(Nuclear Physics)

もっと見る 閉じる

スポンサーリンク