Complementary Metal–Oxide–Semiconductor Ion-Sensitive Field-Effect Transistor Sensor Array with Silicon Nitride Film Formed by Catalytic Chemical Vapor Deposition as an Ion-Sensitive Membrane

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概要

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• Integration of $16 \times 16$ and $32 \times 32$ extended-gate ion-sensitive field-effect transistor (ISFET) arrays with a low-power consumption read-out circuitry has been reported. Si3N4 film used as a pH sensitive layer is deposited on the $4 \times 4$ μm2 extended-gate electrodes of ISFETs in the integrated circuit by catalytic chemical vapor deposition (Cat-CVD). The average pH sensitivity is 41 mV/pH, and the distribution obeys a Gaussian distribution with a standard deviation of 1.5–3.4 mV. The result is compared with that of pH sensitivity measurement using an Al2O3 layer formed by O2 plasma.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2010-01-25

著者

• Matsumura Hideki

  School Of Materials Science Jaist (japan Advanced Institute Of Science And Technology)

• Ohdaira Keisuke

  School Of Materials Science Japan Advanced Institute Of Science And Technology (jaist)

• Ozawa Hiroaki

  Department Of Applied Chemistry Graduate School Of Engineering Kyushu University

• Nakazato Kazuo

  Department Of Electrical Engineering And Computer Science Graduate School Of Engineering Nagoya Univ

• Kagohashi Yuji

  Department of Electrical and Computer Science, Graduation School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

• Uno Shigeyasu

  Department of Electrical and Computer Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

• Uno Shigeyasu

  Department of Electrical and Computer Science, Graduation School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

• Ohdaira Keisuke

  School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan

• Nakazato Kazuo

  Department of Electrical and Computer Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

• Matsumura Hideki

  School of Material Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan

• Matsumura Hideki

  School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan

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