Mass-Spectrometric Studies of Catalytic Chemical Vapor Deposition Processes of Organic Silicon Compounds Containing Nitrogen
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概要
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The mechanism of catalytic chemical vapor deposition (Cat-CVD) processes for hexamethyldisilazane (HMDS) and trisdimethylaminosilane (TDMAS), which are used as source gases to prepare SiNx or SiCxNy films, was studied using three different mass spectrometric techniques: ionization by Li+ ion attachment, vacuum-ultraviolet radiation and electron impact. The results for HMDS show that Si–N bonds dissociate selectively, although Si–C bonds are weaker, and (CH3)3SiNH should be one of the main precursors of deposited films. This decomposition mechanism did not change when NH3 was introduced, but the decomposition efficiency was slightly increased. Similar results were obtained for TDMAS.
- 2006-02-15
著者
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MORIMOTO Takashi
School of Materials Science, Japan Advanced Institute of Science and Technology
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UMEMOTO Hironobu
School of Materials Science, Japan Advanced Institute of Science and Technology
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YONEYAMA Koji
School of Materials Science, Japan Advanced Institute of Science and Technology
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Matsumura Hideki
School Of Materials Science Jaist (japan Advanced Institute Of Science And Technology)
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Masuda Atsushi
School of Material Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
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Masuda Atsushi
School of Materials Science, Japan Advanced Institute of Science and Technology, Asahidai, Nomi, Ishikawa 923-1292, Japan
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Umemoto Hironobu
School of Materials Science, Japan Advanced Institute of Science and Technology, Asahidai, Nomi, Ishikawa 923-1292, Japan
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Yoneyama Koji
School of Materials Science, Japan Advanced Institute of Science and Technology, Asahidai, Nomi, Ishikawa 923-1292, Japan
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Ansari S.
School of Materials Science, Japan Advanced Institute of Science and Technology, Asahidai, Nomi, Ishikawa 923-1292, Japan
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Nakajima Teppei
School of Materials Science, Japan Advanced Institute of Science and Technology, Asahidai, Nomi, Ishikawa 923-1292, Japan
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Nakamura Megumi
IAMS Development Gr., Mass Spectrometer Technology Development Division, ANELVA Technix Corporation, Bubai, Fuchu, Tokyo 183-0033, Japan
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Morimoto Takashi
School of Materials Science, Japan Advanced Institute of Science and Technology, Asahidai, Nomi, Ishikawa 923-1292, Japan
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Matsumura Hideki
School of Material Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
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Matsumura Hideki
School of Materials Science, Japan Advanced Institute of Science and Technology, Asahidai, Nomi, Ishikawa 923-1292, Japan
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