Matsumura Hideki | School of Material Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan

スポンサーリンク

概要

関連著者

もっと見る

著作論文

Low-Resistivity Phosphorus-Doped Polycrystalline Silicon Thin Films Formed by Catalytic Chemical Vapor Deposition and Successive Rapid Thermal Annealing
Catalytic Chemical Sputtering: A Novel Method for Obtaining Large-Grain Polycrystalline Silicon : Surfaces, Interfaces, and Films
A Novel Nanoscale Metal Transistor Fabricated by Conventional Photolithography
Role of Hydrogen in Polycrystalline Si by Excimer Laser Annealing
Structural Analysis of Hydrogenated a-Si Films by Reverse Monte Carlo Simulation
Theoretical Consideration of a New Nanometer Transistor Using Metal/Insulator Tunnel-Junction
Nanometer Pattern-Mask Fabricated by Conventional Photolithography
10-nm-Size Fabrication of Semiconductor Substrates and Metal Thin Lines by Conventional Photolithography
Radical Species Formed by the Catalytic Decomposition of NH3 on Heated W Surfaces
Effects of High Nitrogen Pressure and Thermal Treatment on Adhesion to Amorphous Silicon/Silicon Nitride/Polyethersulfone Substrate during Excimer Laser Annealing
Study of Silicidation Process of Tungsten Catalyzer during Silicon Film Deposition in Catalytic Chemical Vapor Deposition
Study on Stability of Amorphous Silicon Thin-Film Transistors Prepared by Catalytic Chemical Vapor Deposition
Mass-Spectrometric Studies of Catalytic Chemical Vapor Deposition Processes of Organic Silicon Compounds Containing Nitrogen
Grain Enlargement of Polycrystalline Silicon by Multipulse Excimer Laser Annealing: Role of Hydrogen
Correlation between O/Er Content Ratio and Photoluminescence Intensity of (Er, O)-Doped Hydrogenated Amorphous Si Thin Films Prepared by a Catalytic Chemical Vapor Deposition/Laser Ablation Hybrid Process
Complementary Metal–Oxide–Semiconductor Ion-Sensitive Field-Effect Transistor Sensor Array with Silicon Nitride Film Formed by Catalytic Chemical Vapor Deposition as an Ion-Sensitive Membrane
Novel Nano-Fabrication Technique with Low Edge Roughness
Quantification of Gas-Phase H-Atom Number Density by Tungsten Phosphate Glass
Relationship between Textured Structure of Substrates and Defect Density of Catalytic Chemical Vapor Deposition Amorphous Silicon Films

もっと見る

スポンサーリンク