MATSUMURA Hideki | School of Materials Science, Japan Advanced Institute of Science and Technology

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概要

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著作論文

Quantification of Gas-Phase H-Atom Number Density by Tungsten Phosphate Glass
Low-Resistivity Phosphorus-Doped Polycrystalline Silicon Thin Films Formed by Catalytic Chemical Vapor Deposition and Successive Rapid Thermal Annealing
Catalytic Chemical Sputtering: A Novel Method for Obtaining Large-Grain Polycrystalline Silicon : Surfaces, Interfaces, and Films
A Novel Nanoscale Metal Transistor Fabricated by Conventional Photolithography
Role of Hydrogen in Polycrystalline Si by Excimer Laser Annealing
Structural Analysis of Hydrogenated a-Si Films by Reverse Monte Carlo Simulation
Correlation between O/Er Content Ratio and Photoluminescence Intensity of (Er, O)-Doped Hydrogenated Amorphous Si Thin Films Prepared by a Catalytic Chemical Vapor Deposition/Laser Ablation Hybrid Process
Effects of High Nitrogen Pressure and Thermal Treatment on Adhesion to Amorphous Silicon/Silicon Nitride/Polyethersulfone Substrate during Excimer Laser Annealing
Theoretical Consideration of a New Nanometer Transistor Using Metal/Insulator Tunnel-Junction
Nanometer Pattern-Mask Fabricated by Conventional Photolithography
10-nm-Size Fabrication of Semiconductor Substrates and Metal Thin Lines by Conventional Photolithography
Radical Species Formed by the Catalytic Decomposition of NH3 on Heated W Surfaces
Effects of High Nitrogen Pressure and Thermal Treatment on Adhesion to Amorphous Silicon/Silicon Nitride/Polyethersulfone Substrate during Excimer Laser Annealing

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