Correlation between O/Er Content Ratio and Photoluminescence Intensity of (Er, O)-Doped Hydrogenated Amorphous Si Thin Films Prepared by a Catalytic Chemical Vapor Deposition/Laser Ablation Hybrid Process
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-07-15
著者
-
SAKAI Joe
School of Materials Science, Japan Advanced Institute of Science and Technology, Hokuriku (JAIST)
-
Sakai Joe
School Of Materials Science Japan Advanced Institute Of Science And Technology (jaist)
-
MASUDA Atsushi
School of Materials Science, Japan Advanced Institute of Science and Technology
-
MATSUMURA Hideki
School of Materials Science, Japan Advanced Institute of Science and Technology
-
AKIYAMA Haruo
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
-
ERYU Osamu
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
-
NAKASHIMA Kenshiro
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
関連論文
- YBa_2Cu_3O_/Pr_Ca_MnO_/YBa_2Cu_3O_ Sandwich Type Josephson Junctions
- Quantification of Gas-Phase H-Atom Number Density by Tungsten Phosphate Glass
- Low-Resistivity Phosphorus-Doped Polycrystalline Silicon Thin Films Formed by Catalytic Chemical Vapor Deposition and Successive Rapid Thermal Annealing
- Catalytic Chemical Sputtering: A Novel Method for Obtaining Large-Grain Polycrystalline Silicon : Surfaces, Interfaces, and Films
- A Novel Nanoscale Metal Transistor Fabricated by Conventional Photolithography
- Role of Hydrogen in Polycrystalline Si by Excimer Laser Annealing
- Structural Analysis of Hydrogenated a-Si Films by Reverse Monte Carlo Simulation
- Correlation between O/Er Content Ratio and Photoluminescence Intensity of (Er, O)-Doped Hydrogenated Amorphous Si Thin Films Prepared by a Catalytic Chemical Vapor Deposition/Laser Ablation Hybrid Process
- Effects of High Nitrogen Pressure and Thermal Treatment on Adhesion to Amorphous Silicon/Silicon Nitride/Polyethersulfone Substrate during Excimer Laser Annealing
- TED-AJ03-197 AN EXPERIMENTAL STUDY ON LOCAL FLAME DISPLACEMENT VELOCITY OF PREMIXED TURBULENT FLAME
- Theoretical Consideration of a New Nanometer Transistor Using Metal/Insulator Tunnel-Junction
- Nanometer Pattern-Mask Fabricated by Conventional Photolithography
- 10-nm-Size Fabrication of Semiconductor Substrates and Metal Thin Lines by Conventional Photolithography
- Radical Species Formed by the Catalytic Decomposition of NH3 on Heated W Surfaces
- Effects of High Nitrogen Pressure and Thermal Treatment on Adhesion to Amorphous Silicon/Silicon Nitride/Polyethersulfone Substrate during Excimer Laser Annealing
- Studies of Recombination Centers in Gamma-Irradiated p-Type Sillicon
- Fabrication of Magnetic Barrier NbN Tunnel Junctions with the Gap Voltage over 5 mV
- Time-dependent Characteristics of Electric Field-induced Metal–Insulator Transition of Planer VO2/c-Al2O3 Structure
- RF Magnetron Sputtering Growth of Epitaxial SrRuO3 Films with High Conductivity
- Correlation between O/Er Content Ratio and Photoluminescence Intensity of (Er, O)-Doped Hydrogenated Amorphous Si Thin Films Prepared by a Catalytic Chemical Vapor Deposition/Laser Ablation Hybrid Process