10-nm-Size Fabrication of Semiconductor Substrates and Metal Thin Lines by Conventional Photolithography
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-12-30
著者
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MATSUMURA Hideki
School of Materials Science, Japan Advanced Institute of Science and Technology
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Matsumura Hideki
School Of Materials Science Japan Advanced Institute Of Science And Technology(jaist)
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Matsumura Hideki
School Of Materials Science Jaist (japan Advanced Institute Of Science And Technology)
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HASHIOKA Shingi
School of Materials Science, Japan Advanced Institute of Science and Technology(JAIST)
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Hashioka Shingi
School Of Materials Science Japan Advanced Institute Of Science And Technology(jaist)
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Matsumura Hideki
School of Material Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
関連論文
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- Low-Resistivity Phosphorus-Doped Polycrystalline Silicon Thin Films Formed by Catalytic Chemical Vapor Deposition and Successive Rapid Thermal Annealing
- Catalytic Chemical Sputtering: A Novel Method for Obtaining Large-Grain Polycrystalline Silicon : Surfaces, Interfaces, and Films
- A Novel Nanoscale Metal Transistor Fabricated by Conventional Photolithography
- Role of Hydrogen in Polycrystalline Si by Excimer Laser Annealing
- Structural Analysis of Hydrogenated a-Si Films by Reverse Monte Carlo Simulation
- Correlation between O/Er Content Ratio and Photoluminescence Intensity of (Er, O)-Doped Hydrogenated Amorphous Si Thin Films Prepared by a Catalytic Chemical Vapor Deposition/Laser Ablation Hybrid Process
- Effects of High Nitrogen Pressure and Thermal Treatment on Adhesion to Amorphous Silicon/Silicon Nitride/Polyethersulfone Substrate during Excimer Laser Annealing
- Theoretical Consideration of a New Nanometer Transistor Using Metal/Insulator Tunnel-Junction
- Nanometer Pattern-Mask Fabricated by Conventional Photolithography
- 10-nm-Size Fabrication of Semiconductor Substrates and Metal Thin Lines by Conventional Photolithography
- Radical Species Formed by the Catalytic Decomposition of NH3 on Heated W Surfaces
- Effects of High Nitrogen Pressure and Thermal Treatment on Adhesion to Amorphous Silicon/Silicon Nitride/Polyethersulfone Substrate during Excimer Laser Annealing
- Study of Silicidation Process of Tungsten Catalyzer during Silicon Film Deposition in Catalytic Chemical Vapor Deposition
- Study on Stability of Amorphous Silicon Thin-Film Transistors Prepared by Catalytic Chemical Vapor Deposition
- Mass-Spectrometric Studies of Catalytic Chemical Vapor Deposition Processes of Organic Silicon Compounds Containing Nitrogen
- Grain Enlargement of Polycrystalline Silicon by Multipulse Excimer Laser Annealing: Role of Hydrogen
- Correlation between O/Er Content Ratio and Photoluminescence Intensity of (Er, O)-Doped Hydrogenated Amorphous Si Thin Films Prepared by a Catalytic Chemical Vapor Deposition/Laser Ablation Hybrid Process
- Complementary Metal–Oxide–Semiconductor Ion-Sensitive Field-Effect Transistor Sensor Array with Silicon Nitride Film Formed by Catalytic Chemical Vapor Deposition as an Ion-Sensitive Membrane
- Novel Nano-Fabrication Technique with Low Edge Roughness
- Quantification of Gas-Phase H-Atom Number Density by Tungsten Phosphate Glass
- Relationship between Textured Structure of Substrates and Defect Density of Catalytic Chemical Vapor Deposition Amorphous Silicon Films