Grain Enlargement of Polycrystalline Silicon by Multipulse Excimer Laser Annealing: Role of Hydrogen

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概要

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• The role of hydrogen introduced into melt-Si during excimer laser annealing (ELA) is examined from the viewpoint of grain enlargement. An amorphous silicon (a-Si)/SiN/quartz glass structure is successfully prepared by a catalytic chemical vapor deposition (Cat-CVD) method for a SiN film, in which the hydrogen concentration of the SiN film is controlled. The grain size increases as the hydrogen concentration decreases, and it partially exceeds 2 μm when the hydrogen concentration of the SiN film is fixed at 2.3 at. %. The relationship between defects at grain boundary and hydrogen is also considered.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-04-15

著者

• Miyoshi Tadaki

  Department Of Electrical And Electronic Engineering

• KITAMON Yoshitaka

  Department of Electrical and Electronic Engineering, Yamaguchi University

• Kawamoto Naoya

  Department Of Electrical And Electronic Engineering Yamaguchi University

• Matsumura Hideki

  School Of Materials Science Jaist (japan Advanced Institute Of Science And Technology)

• Matsuo Naoto

  Department Of Electrical And Electronic Engineering Yamaguchi University

• Hamada Hiroki

  Frontier Devices Research Center, SANYO Electric Co., Ltd., 1-18-13 Hashiridani, Hirakata, Osaka 573-8534, Japan

• Masuda Atsushi

  School of Material Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan

• Seri Yasuhiro

  School of Material Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan

• Nishimori Toshimasa

  Department of Electrical and Electronic Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan

• Matsuo Naoto

  Department of Electrical & Electronic Engineering, Yamaguchi University

• Matsuo Naoto

  Department of Materials Science and Chemistry, Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280, Japan

• Kawamoto Naoya

  Department of Electrical and Electronic Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan

• Miyoshi Tadaki

  Department of Electrical & Electronic Engineering, Yamaguchi University

• Miyoshi Tadaki

  Department of Electrical and Electronic Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan

• Kitamon Yoshitaka

  Department of Electrical and Electronic Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan

• Matsumura Hideki

  School of Material Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan

• Kawamoto Naoya

  Department of Electrical & Electronic Engineering, Yamaguchi University, 2557 Tokiwadai, Ube 755-8611, Japan

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