Internal Stress in Polycrystalline Si Film Recrystallized by Excimer Laser Annealing
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概要
- 論文の詳細を見る
Internal stresses in polycrystalline-Si (poly-Si) films fabricated by excimer laser annealing on the SiO2/glass, SiO2/SiN/glass and quartz substrates are examined by the Raman transverse optical phonon peak shift. The full-width at half maximum of the peak and the grain morphology are also measured. The relaxation of the internal stress due to the formation of a secondary crystal grain in the poly-Si film on the SiO2/glass substrate is also discussed.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2004-02-15
著者
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Hamada Hiroki
Materials And Devices Development Center Bu Sanyo Electric Co. Ltd.
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Kawamoto Naoya
Department Of Electrical And Electronic Engineering Yamaguchi University
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Hamada Hiroki
Materials and Devices Development Center, SANYO Electric Co., Ltd., Hashiridani 1-18-13, Hirakata, Osaka 573-8534, Japan
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Matsuo Naoto
Department of Electrical & Electronic Engineering, Yamaguchi University
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Kawamoto Naoya
Department of Electrical and Electronic Engineering, Yamaguchi University, Tokiwadai 2-16-1, Ube 755-8611, Japan
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Matsuo Naoto
Department of Material Science Engineering, Himeji Institute of Technology, Shosha 2167, Himeji 671-2201, Japan
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Kawamoto Naoya
Department of Electrical & Electronic Engineering, Yamaguchi University, 2557 Tokiwadai, Ube 755-8611, Japan
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